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BFS17LT1

Description
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size46KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BFS17LT1 Overview

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB

BFS17LT1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1300 MHz
VCEsat-Max0.4 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BFS17LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise amplifier, oscillator and
mixer applications. Packaged for thick or thin film circuits using surface mount
components.
T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Maximum Junction Temperature
Symbol
VCEO
VCBO
TJmax
Value
15
25
150
Unit
Vdc
Vdc
°C
BFS17LT1
RF TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C (1)
Storage Temperature
Thermal Resistance Junction to Ambient (1)
Symbol
PD
Tstg
R
θJA
Max
350
2.8
– 55 to +150
357
Unit
mW
mW/°C
°C
°C/W
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
DEVICE MARKING
BFS17LT1 = E1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA)
Collector–Base Breakdown Voltage (IC = 100
µA)
Collector Cutoff Current (VCE = 10 V)
Collector Cutoff Current (VCB = 10 V)
Emitter Cutoff Current (VEB = 4 V)
V(BR)CEO
V(BR)CBO
ICEO
ICBO
IEBO
15
25
25
25
100
Vdc
Vdc
nA
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 2 mA, VCE = 1 V)
(IC = 25 mA, VCE = 1 V)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA)
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA)
hFE
20
20
VCE(sat)
VBE(sat)
150
0.4
1
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 2 mA, VCE = 5 V, f = 500 MHz)
(IC = 25 mA, VCE = 5 V, f = 500 MHz)
Output Capacitance (VCB = 10 V, f = 1 MHz)
Noise Figure (IC = 2 mA, VCE = 5 V, RS = 50
Ω,
f = 30 MHz)
NOTE:
1. Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
REV 7
fT
CCB
NF
1
1.3
1
5
GHz
pF
dB
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
BFS17LT1
1
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