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BZX55-B6V2

Description
Zener Diode, 6.2V V(Z), 2%, 0.5W,
CategoryDiscrete semiconductor    diode   
File Size117KB,4 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric View All

BZX55-B6V2 Overview

Zener Diode, 6.2V V(Z), 2%, 0.5W,

BZX55-B6V2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance10 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage6.2 V
surface mountNO
Maximum voltage tolerance2%
Working test current5 mA
Base Number Matches1
BL
FEATURES
BZX55 --- SERIES
ZENER DIODES
POWER DISSIPATION: 500 mW
Silicon planar power zener diodes
The zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ±5%. Replace suffix "C" with "B" for ±2%,
Replace suffix "C" with "A" for 1%.
other voltage tolerance and other zener voltage are
available upon request.
Case:DO-35, Glass Case
Terminals: Solderable per MIL-STD-202, method 208
Polarity: Cathode band
Marking: Type number
Approx. Weight: "DO34" 0.093 grams,"DO35" 0.13grams
DO-34(GLASS)
MECHANICAL DATA
DO-35(GLASS)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
Pow er dissipation @ T
amb
=25
Junction temperature
Storage temperature range
VALUE
UNIT
P
tot
T
J
T
s
500
1)
175
-55---+175
mW
SYMBOL
Thermal resistance junction to ambient
Forw ard voltage at I
F
=100mA
MIN
TYP
MAX
300
1)
1.0
UNIT
/W
V
www.gmesemi.com
R
θ
JA
V
F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Document Number BZX55
BL
GALAXY ELECTRICAL
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