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FEATURES
BZX55 --- SERIES
ZENER DIODES
POWER DISSIPATION: 500 mW
Silicon planar power zener diodes
The zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ±5%. Replace suffix "C" with "B" for ±2%,
Replace suffix "C" with "A" for 1%.
other voltage tolerance and other zener voltage are
available upon request.
Case:DO-35, Glass Case
Terminals: Solderable per MIL-STD-202, method 208
Polarity: Cathode band
Marking: Type number
Approx. Weight: "DO34" 0.093 grams,"DO35" 0.13grams
DO-34(GLASS)
MECHANICAL DATA
DO-35(GLASS)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
Pow er dissipation @ T
amb
=25
Junction temperature
Storage temperature range
VALUE
UNIT
P
tot
T
J
T
s
500
1)
175
-55---+175
mW
SYMBOL
Thermal resistance junction to ambient
Forw ard voltage at I
F
=100mA
MIN
TYP
MAX
300
1)
1.0
UNIT
/W
V
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R
θ
JA
V
F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Document Number BZX55
BL
GALAXY ELECTRICAL
1.
RATINGSANDCHARACTERISTICCURVES
FIG.2 -- BREAKDOWN CHARACTERISTICS
BZX55---SERIES
mA
30
T
J
=25
0
C
C10
C12
C15
20
BZX55...
I
Z
C18
C22
C27
10
Test current Iz
5mA
C33
0
0
10
20
30
40 V
v
Z
FIG.3 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
mW
500
400
P
tot
300
200
100
0
0
100
T
amb
200
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Document Number BZX55
BL
GALAXY ELECTRICAL
4.
Microcontroller MCU
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