EEWORLDEEWORLDEEWORLD

Part Number

Search

ERB37-08

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size49KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

ERB37-08 Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM),

ERB37-08 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.25 µs
surface mountNO
Base Number Matches1
BL
FEATURES
Low cos t
GALAXY ELECTRICAL
ERB37-08---ERB37-10
VOLT AGE RANGE: 800--1000 V
CURRENT : 1.0 A
FAST RECOVERY RECT IFIER
DO - 41
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% .
ERB37-08
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
ERB37-10
1000
700
1000
1.0
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
800
560
800
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
F SM
30.0
A
Maximum instantaneous f orw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.5
5.0
100.0
250
12
55
-55----+150
-55----+150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Meas ured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V D C .
3. Therm al res istanc e f rom junction to am bient.
www.galaxycn.com
Document Number 0261055
BL
GALAXY ELECTRICAL
1.

ERB37-08 Related Products

ERB37-08
Description Rectifier Diode, 1 Element, 1A, 800V V(RRM),
Is it Rohs certified? conform to
Maker Galaxy Microelectronics
Reach Compliance Code unknown
Configuration SINGLE
Diode type RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V
Maximum non-repetitive peak forward current 30 A
Number of components 1
Maximum operating temperature 150 °C
Maximum output current 1 A
Maximum repetitive peak reverse voltage 800 V
Maximum reverse recovery time 0.25 µs
surface mount NO
Base Number Matches 1
How about we have some fun together during the 2011 Spring Festival?
Looking back at 2010, there were so many good things, one more exciting than the other. I won’t list them all here, just look at the forum and you will know. The forum’s activities are bigger and bigg...
fxw451 Talking
Participate in the HELPER2416 development board student aid program: A good hyperterminal
[i=s] This post was last edited by Youyuanyu on 2014-7-12 14:59 [/i] [align=left][b][font=微软雅黑] [/font][/b][/align][align=left][b][font=微软雅黑] My system is Windows7 (32bit)[size=3]. I can't receive dat...
有缘于你 Embedded System
Recruiting embedded software development engineers
Headhunter position [Shanghai] Job responsibilities: 1. Responsible for the development of communication protocols for supporting communication modules (GRPS, 4G modules, WI-FI modules) of the Interne...
ff318421749 Recruitment
Battery performance testing device for electric bicycles
This paper gives the implementation method of battery and charger matching performance detection in electric bicycle intelligent detection. This detection system uses a multifunctional data acquisitio...
zbz0529 Power technology
[Evaluation of EC-01F-Kit, the NB-IoT development board of Anxinke] Unboxing
1. Receiving goods The RF NB-IoT development board from Essence arrived on time. It also provided a mobile data card and antenna, which activated the computing traffic as soon as it was connected to t...
北方 RF/Wirelessly
Some people say that C language programming of MSP430 is a pseudo-C language programming?
[i=s] This post was last edited by tiankai001 on 2018-12-19 16:41 [/i] [size=4] I saw a post on Baidu Tieba that said "It feels wrong to use msp430 programming after using STM32" [/size] [size=4] [/si...
tiankai001 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2650  1957  1986  1906  171  54  40  39  4  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号