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FCX653TA

Description
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size34KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FCX653TA Overview

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,

FCX653TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)175 MHz
VCEsat-Max0.5 V
Base Number Matches1

FCX653TA Related Products

FCX653TA
Description Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
Is it Rohs certified? conform to
Maker Zetex Semiconductors
Reach Compliance Code not_compliant
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 2 A
Collector-based maximum capacity 30 pF
Collector-emitter maximum voltage 100 V
Configuration SINGLE
Minimum DC current gain (hFE) 25
JESD-30 code R-PSSO-F3
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form FLAT
Terminal location SINGLE
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 175 MHz
VCEsat-Max 0.5 V
Base Number Matches 1

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