ISL74422ARH
Data Sheet
June 2001
File Number
9031.1
itle
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Radiation Hardened 9A, Non-Inverting
Power MOSFET Drivers
The Radiation Hardened ISL4422ARH is a non-inverting,
monolithic high-speed MOSFET driver designed to convert a
5V CMOS level input signal into a high current output at
voltages up to 18V. Its fast rise times and high current output
allow very quick control of even the largest power MOSFETs
in high frequency applications.
The input of the ISL4422ARH can be directly driven by our
HS-1825ARH and IS-1845ASRH PWM devices. The 9A
high current output minimizes power losses in MOSFETs by
rapidly charging and discharging high gate capacitances.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to Single Event Latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-01521. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• QML Qualified per MIL-PRF-38535 Requirements
• Electrically Screened to DSCC SMD # 5962-01521
• Radiation Environment
- Total Dose (Max) . . . . . . . . . . . . . . . . . . . . 300krad(SI)
- Latch-Up Immune
- Negligible Sensitivity to Low Dose Rates
• I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9A(Min)
• T
F
(C
L
= 10,000pF). . . . . . . . . . . . . . 70ns(Typ); 90ns(Max)
• T
R
(C
L
= 10,000pF) . . . . . . . . . . . 90ns(Typ); 105ns(Max)
• Prop Delay High-Low (C
L
= 10,000pF) . . . . . . . 75ns(Max)
55ns(Typ)
• Prop Delay Low-High (C
L
= 10,000pF) . . . . . . . 50ns(Max)
30ns(Typ)
• Consistent Delay Times with V
CC
Changes
• Wide Supply Voltage Range . . . . . . . . . . . . . . . 7V to 18V
• Low Stand-by Power Consumption
- Input Low . . . . . . . . . . . . . . . . . . . . . . . . . . <2mW(Max)
- Inputs High . . . . . . . . . . . . . . . . . . . . . . . . <18mW(Max)
• ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . .>1750V
Pinout
ISL74422ARH-F (FLATPACK CDFP4-F16)
TOP VIEW
NC
NC
LVS
IN
LGND
NC
NC
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VS
VS
NC
OUT
OUT
NC
NC
GND
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
Ordering Information
ORDERING NUMBER
5962F0152101VXC
5962F0152101QXC
ISL74422ARHF/Proto
INTERNAL
MKT. NUMBER
ISL74422ARHVF
ISL74422ARHQF
ISL74422ARHF/Proto
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
NOTES:
1. Pin 3 provides the supply voltage for the control logic. It is not
internally connected to Pins 15 and 16 for noise immunity
purposes, but may be connected externally.
2. Pin 5 is the control logic return. It is not internally connected to
Pins 8 and 9 for noise immunity purposes, but may be connected
externally.
3. Pins 8 and 9 MUST both be connected to GND.
4. Pins 12 and 13 MUST both be connected to the output.
5. Pins 15 and 16 MUST both be connected to VS.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001, All Rights Reserved
ISL7442ARH
Die Characteristics
DIE DIMENSIONS:
3838µm x 4829µm (151.1 mils x 190.1mils)
Thickness: 483µm
±
25.4µm (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ
±
1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ
±
2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
30
Metallization Mask Layout
ISL74422ARH
LGND
IN
LVCC
PGND
PVCC
OUT2
OUT1
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
2
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