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BUZ60

Description
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BUZ60 Overview

5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET

BUZ60 Parametric

Parameter NameAttribute value
MakerSEMELAB
package instructionFLANGE MOUNT, R-MSFM-T3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1

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Index Files: 2515  2706  2549  1515  1132  51  55  52  31  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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