BCW89RTC datasheet, PDF - EEWORLD Datasheet

BCW89RTC: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size25KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	7 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

	BCW89RTC	BCW89RTA
Description	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-based maximum capacity	7 pF	7 pF
Collector-emitter maximum voltage	60 V	60 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
VCEsat-Max	0.3 V	0.3 V
Base Number Matches	1	1

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