BCX17TA datasheet, PDF - EEWORLD Datasheet

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BCX17TA: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCX17TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SOT-23, 3 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
Guideline	CECC50002-235
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.62 V
Base Number Matches	1

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS –

BCX17

BCX17R

BCX19

– T1

– T4

BCX17

E

C

B

COMPLIMENTARY TYPES -

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Collector-Emitter Voltage (I

C

=-10mA)

Emitter-Base Voltage

Collector Current

Peak Collector Current

Peak Emitter Current

Base Current

Peak Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CES

V

CEO

V

EBO

I

C

I

CM

I

EM

I

B

I

BM

P

tot

T

j

:T

stg

VALUE

-50

-45

-5

-500

-1000

-100

-200

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base Cut-Off

Current

Emitter-Base Cut-Off

Current

Base-Emitter Voltage

Collector-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

SYMBOL

I

CBO

I

EBO

V

BE

V

CE(sat)

h

FE

100

70

40

100

8.0

MIN.

TYP.

MAX. UNIT

-100

-200

-10

-1.2

-620

600

nA

µ

A

CONDITIONS.

I

E

=0, V

CB

=-20V

I

E

=0, V

CB

=-20V, T

j

=150°C

I

C

=0, V

EB

=-1V

I

C

=-500mA, V

CE

=-1V*

I

C

=-500mA, I

B

=-50mA*

I

C

=-10

0

mA, V

CE

=-1V

I

C

=-300mA, V

CE

=-1V*

I

C

=-500mA, V

CE

=-1V*

MHz

pF

I

C

=-10mA, V

CE

=-5V

f =35MHz

V

CB

=-10V, f =1MHz

µ

A

V

mV

f

T

C

obo

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

TBA

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