BSS65R datasheet, PDF - EEWORLD Datasheet

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BSS65R: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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BSS65R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BSS65R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	400 MHz
Maximum off time (toff)	90 ns
Maximum opening time (tons)	60 ns
Base Number Matches	1

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SOT23 PNP SILICON PLANAR

HIGH SPEED TRANSISTOR

ISSUE 2 - SEPTEMBER 1995

PARTMARKING DETAIL

7

BSS65 - L1

BSS65R - L5

BSS65

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

V

(BR)CBO

V

(BR)EBO

Cut-Off Currents

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

-0.75

-0.82

30

40

400

6

23

34

60

90

MIN.

-12

-4

-100

-0.15

-0.25

-0.98

-1.20

150

MHz

pF

nS

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

C

P

TOT

t

j

:t

stg

TYP.

MAX.

VALUE

-12

-4

-200

-100

-50

330

-55 to +150

UNIT

V

nA

V

CONDITIONS.

I

C

=-10mA

I

C

=-10

µ

A *

I

E

=-10

µ

A

V

CB

=-6V, I

E

=0

V

EB

=-4V, I

C

=0

I

C

=-10mA, I

B

=-1mA

I

C

=-30mA, I

B

=-3mA

I

C

=-10mA, I

B

=-1mA

I

C

=-30mA, I

B

=-3mA

I

C

=-10mA, V

CE

=-0.3V

I

C

=-30mA, V

CE

=-0.5V

I

C

=-30mA, V

CE

=-10V,

f=100MHz

V

CB

=-5V, I

E

=0,

f=1MHz

V

EB

=-0.5V, I

C

=0, f=1MHz

I

C

=-30mA

I

B1

= -I

B2

= -1.5mA

V

CC

=-10V

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

BreakdownVoltages

V

(BR)CEO

Static Forward Current h

FE

Transfer Ratio

Transition Frequency

Collector-Base

Capacitance

Emitter Base Capacitance

f

T

C

obo

C

ebo

t

on

t

off

Switching Times

Turn-On Time

Turn-Off Time

PAGE NUMBER

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