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BAV70L

Description
2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-07, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size50KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BAV70L Overview

2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-07, 3 PIN

BAV70L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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