BCW70 datasheet, PDF - EEWORLD Datasheet

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BCW70: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size175KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCW70 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCW70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	215
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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SOT23 PNP PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 FEBRUARY 1995

PARTMARKING DETAILS

BCW69

BCW70

BCW69R

BCW70R

H1

H2

H4

H5

BCW69

BCW70

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage (I

C

=2mA)

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base Cut-Off

Current

Base-Emitter Voltage

Collector-Emitter

Saturation Voltage

Base-Emitter Saturation

Voltage

SYMBOL MIN.

I

CBO

V

BE

V

CE(sat)

V

BE(sat)

120

215

Transition Frequency

Collector Capacitance

Noise Figure

f

T

C

TC

N

-600

-80

-150

-720

-810

90

150

7

10

260

500

MHz

pF

dB

SYMBOL

V

CBO

V

CEO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

TYP.

MAX.

-100

-10

-750

-300

VALUE

-50

-45

-5

-200

-100

330

-55 to +150

UNIT

µ

A

SOT23

UNIT

V

mA

A

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

CONDITIONS.

I

E

=0, V

CB

=-20V

I

E

=0,

V

CB

=-20V,T

j

=100°C

I

C

=-2.0mA, V

CE

=-5V

I

C

=-10mA, I

B

=-0.5mA

I

C

=-50mA, I

B

=-2.5mA

I

C

=-10mA, I

B

=-0.5mA

I

C

=-50mA, I

B

=-2.5mA

I

C

=-10

µ

A, V

CE

=-5V

I

C

=-2mA, V

CE

=-5V

I

C

=-10

µ

A, V

CE

=-5V

I

C

=-2mA, V

CE

=-5V

I

C

=-10mA, V

CE

=-5V

f =35MHz

I

E

=I

e

=0, V

CB

=-10V

f =1MHz

I

C

=-200

µ

A, V

CE

=-5V

R

S

=2K

Ω

, f =1KHz

B =200Hz

nA

mV

Static Forward

BCW69 h

FE

Current Transfer

Ratio

BCW70

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

PAGE NO

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