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BSR19AT/R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size48KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSR19AT/R Overview

Transistor

BSR19AT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.6 A
ConfigurationSingle
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Nominal transition frequency (fT)100 MHz
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BSR19; BSR19A
NPN high voltage transistors
Product specification
Supersedes data of 2004 Jan 13
2004 Mar 15

BSR19AT/R Related Products

BSR19AT/R BSR19T/R
Description Transistor Transistor
Is it Rohs certified? conform to incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.6 A 0.6 A
Configuration Single Single
JESD-609 code e3 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.35 W 0.35 W
surface mount YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 100 MHz 100 MHz
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