LESHAN RADIO COMPANY, LTD.
Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
• Large capacitance ratio, low series resistance
1
BB 535
1
CATHODE
2
ANODE
2
CASE 477– 02, STYLE 1
SOD– 323
MAXIMUM RATINGS
Parameter
Diode Reverse Voltage
Peak reverse voltage ( R > 5kΩ)
Forward Current
Operating temperature range
Storage temperature
Symbol
V
R
V
RM
I
F
T
op
T
stg
Value
30
35
20
- 55 ~ + 125
- 55 ... + 150
Unit
V
V
mA
°C
°C
THERMAL RESISTANCE
Parameter
Junction - ambient
Symbol
R
thJA
Value
<450
Unit
K/W
DC CHARACTERISTICS
Characteristic
Reverse current
V
R
= 30 V, T
A
= 25 °C
V
R
= 30 V, T A = 85 °C
Symbol
I
R
Min
–
–
Typ
–
–
Max
10
200
Unit
nA
AC CHARACTERISTICS
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
Capacitance matching
V
R
= 1 ... 28 V, f = 1 MHz
Series resistance
V
R
= 3 V, f = 470 MHz
Series inductance
C
T
17.5
14.01
2.05
1.9
C
T2
/ C
T25
6
C
T1
/ C
T28
8.2
∆
C
T
/ C
T
–
r
s
pF
18.7
15
2.24
2.1
6.7
8.9
–
0.55
2
20
16.1
2.4
2.3
–
7.5
–
9.8
%
2.5
Ω
–
–
0.65
–
nH
Ls
S6–1/3
LESHAN RADIO COMPANY, LTD.
BB 535
Diode capacitance
C
T
= f ( V
R
) f = 1MHz
20
18
16
Temperature coefficient of the diodecapacitance
T
Cc
= f ( V
R
) f = 1MHz
10
-1
10
-2
14
C
T
( pF )
12
10
8
6
T
Cc
( 1/°C )
10
-3
10
-4
4
2
0
0
5
10
15
20
25
30
10
-5
10
0
10
1
10
2
V
R
( V )
V
R
( V )
Normalized diode capacitance
C (T
A
) / C (25°C) = f ( T
A
), f = 1MHz, V
R
= Parameter
1.06
10
3
Reverse current
I
R
= f ( T
A
), V
R
= 28V
1.04
1V
1.02
2V
C
TA
/ C
25
10
2
25V
1.00
I
R
( pA )
10
1
10
0
-10
0.98
0.96
-30
-10
10
30
50
70
90
110
10
30
50
70
90
100
T
A
( °C )
T
A
( °C )
S6–2/3
京公网安备 11010802033920号
EEWORLD
