DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCX51; BCX52; BCX53
PNP medium power transistors
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 19
Philips Semiconductors
Product specification
PNP medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Medium power general purposes
•
Driver stages of audio amplifiers.
DESCRIPTION
handbook, halfpage
BCX51; BCX52; BCX53
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complements: BCX54, BCX55 and BCX56.
3
2
MARKING
TYPE
NUMBER
BCX51
BCX51-10
BCX51-16
BCX52
BCX52-10
MARKING
CODE
AA
AC
AD
AE
AG
TYPE
NUMBER
BCX52-16
BCX53
BCX53-10
BCX53-16
MARKING
CODE
AM
AH
AK
AL
1
Bottom view
2
3
MAM297
1
Fig.1 Simplified outline (SOT89) and symbol.
1999 Apr 19
2
Philips Semiconductors
Product specification
PNP medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCX51
BCX52
BCX53
V
CEO
collector-emitter voltage
BCX51
BCX52
BCX53
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BCX51; BCX52; BCX53
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−45
−60
−100
−45
−60
−80
−5
−1
−1.5
−200
1.3
+150
150
+150
V
V
V
V
V
V
V
A
A
UNIT
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
94
14
UNIT
K/W
K/W
thermal resistance from junction to soldering point note 1
1999 Apr 19
3
Philips Semiconductors
Product specification
PNP medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
BCX51; BCX52; BCX53
MIN.
−
−
−
40
63
25
63
100
TYP. MAX. UNIT
−
−
−
−
−
−
−
−
−
−
50
−100
−10
−100
−
250
−
160
250
−500
−1
−
mV
V
MHz
nA
µA
nA
I
E
= 0; V
CB
=
−30
V; T
j
= 125
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−2
V; see Fig.2
I
C
=
−5
mA
I
C
=
−150
mA
I
C
=
−500
mA
DC current gain
BCX51-10; BCX52-10; BCX53-10
BCX51-16; BCX52-16; BCX53-16
V
CEsat
V
BE
f
T
collector-emitter saturation voltage
base-emitter voltage
transition frequency
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; V
CE
=
−2
V
I
C
=
−150
mA; V
CE
=
−2
V; see Fig.2
−
−
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
−
handbook, full pagewidth
160
MBH730
hFE
120
VCE =
−2
V
80
40
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
Fig.2 DC current gain; typical values.
1999 Apr 19
4
Philips Semiconductors
Product specification
PNP medium power transistors
PACKAGE OUTLINE
BCX51; BCX52; BCX53
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
D
B
A
b3
E
HE
L
1
2
b2
3
c
w
M
b1
e
1
e
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
b1
0.48
0.35
b2
0.53
0.40
b3
1.8
1.4
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
L
min.
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 19
5
京公网安备 11010802033920号
EEWORLD
