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BCX51

Description
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size119KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

BCX51 Overview

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

BCX51 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V
Base Number Matches1
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
lee,,e9 Ccnnl .nmc
lAnu
n
COMPLEMENTARY
TYPE -
BCX51 - BCX54
BCX52 - BCX55
BCX53 - BCX56
PARTMARKING
BCX51
-AA
DETAILS -
BCX52
- AE
BCX53
- AH
\@
c
B
SOT89
SYMBOL
Voltage
Voltage
Voltage
Current
VCBO
‘CEO
Gii2
I
c
BCX51-10-AC
BCX51-16-AD
BCX52-10-AG
BCX52-16-AM
BCX53-I O- AK
BCX53-I 6- AL
E
ABSOLUTE MAXIMUM
PARAMETER
Collector-Base
Collector-Emitter
Emitter-Base
Paak Pulse
RATINGS.
BCX51
-45
-45
BCX52
-60
-60
-5
-1,5
-1
1
BCX53
UNIT
.
-1oo
-80
v
v
v
A
A
w
vEao
ICM
Ic
P
tot
Range
Ti:TS,O
,.
Continuous
Collector
Current
——.
—_—
Power Dissipation
at Tamb=250C
..—
Operating
and
Storage
Temperature
-65 to +150
“c
ELECTRICAL CHARACTERISTICS (at T~~h = 25°C unless otherwise stated).
PARAMETER
Collector-Base
Braakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
-
Collector
Voltage
Cut-Off
SYMBOL
BCX53
BCX52
BCX51
BCX53
BCX52
BCX51
V(aR)cao
MIN.
TYP.
MAX.
UNIT
CONDITIONS,
=-1
IC
OOWA
=-1OOKA
IC
=-1
IC
OOKA
-1oo
-60
-45
v
v
v
v
v
-0.1
-20
PA
PA
nA
v(aRlcEo
-80
-60
-45
-5
IC
OmA*
=-l
Ic =-10mA*
Ic =-10mA’
=-IOWA
IE
v(aR)Eao
a
Current
ICBO
——
Cut-Off
Current
Collector-Emitter
Voltage
Saturation
~ase-Emitt;
r
Turn-On
Voltaae
Emitter
—.
Static Forward
Transfer
Ratio
Current
‘a -‘~
-20
Vca =-30V,
I lEao
Vca
=-30V
vEa
=-4V
Tamb=l
50”C
‘CE(sat)
-0.5
v
Ic =-500mA,
=-500mA,
la =-50mA*
,V aE(On)
h~~
-1.0 v
Ic
I
VCE =-2V*
!
-lo
,-16
Transition
Output
‘Measured
Frequency
Capacitance
under
pulsed
fT
25
40
25
63
100
250
160
250
MHz
25
pF
i Ic
Ilc
Ic
Ic
Ic
=-5mA, VCE =-2V*
=-150mA,
Vc, =-2V*
=-500mA,
VCE =-2V*
=-150mA,
VCE =-2V*
=-150mA,
VCE =-2V*
VCE =-1OV,
f=l MHz
150
Ic =-50mA,
f=100MHz
Vca =-IOV,
Ic
abo
conditions.
Pulse width= 300~s. Duty cycle <2%
3-34
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