5962H9658401VXA datasheet, PDF

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5962H9658401VXA: DescriptionAdder/Subtractor, CMOS, CDFP16,; Categorylogic logic; File Size372KB，24 Pages; ManufacturerCobham PLC

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5962H9658401VXA Overview

Adder/Subtractor, CMOS, CDFP16,

5962H9658401VXA Parametric

Parameter Name	Attribute value
Maker	Cobham PLC
Reach Compliance Code	unknown
JESD-30 code	R-XDFP-F16
Logic integrated circuit type	ADDER/SUBTRACTOR
Number of terminals	16
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC
encapsulated code	DFP
Encapsulate equivalent code	FL16,.3
Package shape	RECTANGULAR
Package form	FLATPACK
power supply	5 V
Certification status	Not Qualified
Filter level	38535V;38534K;883S
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	1M Rad(Si) V
Base Number Matches	1

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REVISIONS

LTR

DESCRIPTION

Add limit for linear energy threshold (LET) with no latch-up in section 1.5.

Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes

throughout. - TVN

Add new device types 02 and 03. Add die requirements in appendix A. Update

radiation features in section 1.5 and SEP table IB. - MAA.

Add equivalent test circuit and footnote 5 in figure 4. Delete class M

requirements. - MAA

DATE (

YR-MO-DA

)

06-03-20

APPROVED

Thomas M. Hess

10-12-07

12-07-24

Thomas M. Hess

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

Joseph A. Kerby

CHECKED BY

Monica L. Poelking

APPROVED BY

Monica L. Poelking

DRAWING APPROVAL DATE

96-11-18

REVISION LEVEL

AMSC N/A

DSCC FORM 2233

APR 97

SIZE

CAGE CODE

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

http://www.landandmaritime.dla.mil

MICROCIRCUIT, DIGITAL, RADIATION HARDENED,

ADVANCED CMOS, 4-BIT BINARY FULL ADDER WITH

FAST CARRY, MONOLITHIC SILICON

67268

SHEET

5962-96584

1 OF 23

5962-E290-12

1.3 Absolute maximum ratings. 1/ 2/ 3/

Supply voltage range (V

) .................................................................................. -0.3 V dc to +7.0 V dc

DC input voltage range (V

) ................................................................................ -0.3 V dc to V

+ 0.3 V dc

DC output voltage range (V

OUT

) ........................................................................... -0.3 V dc to V

+ 0.3 V dc

DC input current, any one input (I

).....................................................................

±10

Latch-up immunity current (I

) ............................................................................

±150

Storage temperature range (T

STG

) ....................................................................... -65°C to +150°C

Lead temperature (soldering, 5 seconds) ............................................................ +300°C

Thermal resistance, junction-to-case (θ

Case outlines E and X (device type 01) ............................................................. See MIL-STD-1835

Case outline X (device types 02 and 03) ........................................................... 15°C/W

Junction temperature (T

) .................................................................................... +175°C

Maximum package power dissipation (P

Device type 01 ................................................................................................... 1.0 W

Device types 02 and 03 ..................................................................................... 3.3 W 4/

1.4 Recommended operating conditions. 2/ 3/

Supply voltage range (V

Device types 02 and 03 ..................................................................................... +3.0 V dc to +5.5 V dc

Device type 01 ................................................................................................... +4.5 V dc to +5.5 V dc

Input voltage range (V

) ...................................................................................... +0.0 V dc to V

Output voltage range (V

OUT

)................................................................................. +0.0 V dc to V

Maximum input rise or fall time at V

= 4.5 V (t

, t

) ............................................ 1 ns/V 5/

Case operating temperature range (T

) ............................................................... -55°C to +125°C

1.5 Radiation features. 6/

Maximum total dose available:

Device type 01 (dose rate = 50 – 300 rads (Si)/s) ............................................ 1 x 10 rad (Si) 7/

Device type 02 (effective dose rate = 1rad (Si)/s) ............................................ 1 x 10 rad (Si) 8/

Device type 03 (dose rate = 50 – 300 rads (Si)/s) ............................................ 5 x 10 rads (Si) 7/

Single event phenomenon (SEP):

Device type 01:

no upsets occurs at effective LET (see 4.4.4.4) ................................................≤ 80 MeV/(mg/cm ) 9/

no latch-up occurs at effective LET (see 4.4.4.4) .............................................. ≤ 120 MeV/(mg/cm ) 9/

Device types 02 and 03:

no upsets occurs at effective LET (see 4.4.4.4) ................................................≤ 108 MeV/(mg/cm ) 9/

no latch-up occurs at effective LET (see 4.4.4.4) .............................................. ≤ 120 MeV/(mg/cm ) 9/

Dose rate upset (20 ns pulse) (device types 01, 02 and 03) ............................... ≥ 1 x 10 rads (Si)/s 9/ 10/

Dose rate induced latch-up .................................................................................

None 9/

Dose rate survivability (device types 01, 02 and 03) ........................................... ≥ 1 x 10 rads (Si)/s 9/

Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum

levels may degrade performance and affect reliability.

2/ Unless otherwise specified, all voltages are referenced to V

3/ The limits for the parameters specified herein shall apply over the full specified V

range and case temperature range

of -55°C to +125°C unless otherwise specified.

4/ Per MIL-STD-883 method 1012.1 section 3.4.1, P

(Package) = (T

(max) - T

(max)).

5/ Derate system propagation delays by difference in rise time to switch point for t

or t

> 1 ns/V.

6/ Radiation testing is performed on the standard evaluation circuit.

7/ Device types 01 and 03 are tested in accordance with MIL-STD-883, method 1019, condition A.

8/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is

guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per

MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified

effective dose rate, or lower, environment.

9/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase

order or contract.

10/ This limit is applicable for device types 01, 02, 03 with V

≥ 4.5 V. Device types 02 and 03 do not meet this limit at V

< 4.5 V.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96584

SHEET

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883

MIL-STD-1835

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103

MIL-HDBK-780

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at

https://assist.dla.mil/quicksearch/

or from the Standardization Document

Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)

ASTM F1192

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion

Irradiation of semiconductor Devices.

(Copies of these documents are available online at

http://www.astm.org

or from ASTM International, 100 Barr Harbor Drive,

P.O. Box C700, West Conshohocken, PA, 19428-2959).

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q and V.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Truth table. The truth table shall be as specified on figure 2.

3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.

3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96584

SHEET

3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document

revision level control and shall be made available to the preparing and acquiring activity upon request.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the

full case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table IA.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance

submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the

manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96584

SHEET

5962H9658401VXA Related Products

	5962H9658401VXA	5962H9658401QEA	5962H9658401VEC	5962H9658401QXC
Description	Adder/Subtractor, CMOS, CDFP16,	Adder/Subtractor, CMOS, CDIP16,	Adder/Subtractor, CMOS, CDIP16,	Adder/Subtractor, CMOS, CDFP16,
Reach Compliance Code	unknown	unknown	unknown	unknown
JESD-30 code	R-XDFP-F16	R-XDIP-T16	R-XDIP-T16	R-XDFP-F16
Logic integrated circuit type	ADDER/SUBTRACTOR	ADDER/SUBTRACTOR	ADDER/SUBTRACTOR	ADDER/SUBTRACTOR
Number of terminals	16	16	16	16
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DFP	DIP	DIP	DFP
Encapsulate equivalent code	FL16,.3	DIP16,.3	DIP16,.3	FL16,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	IN-LINE	IN-LINE	FLATPACK
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	38535V;38534K;883S	38535Q/M;38534H;883B	38535V;38534K;883S	38535Q/M;38534H;883B
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	THROUGH-HOLE	THROUGH-HOLE	FLAT
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
total dose	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V
Base Number Matches	1	1	1	1
package instruction	-	DIP, DIP16,.3	DIP, DIP16,.3	DFP, FL16,.3

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