ACS04MS
Data Sheet
November 1998
File Number
4541
Radiation Hardened Hex Inverter
The Radiation Hardened ACS04MS is a Hex Inverter. This
device simply inverts the level present on each input. All
inputs are buffered and the outputs are designed for
balanced propagation delay and transition times.
The ACS04MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS04MS are
contained in SMD 5962-98603. A “hot-link” is provided
on our homepage with instructions for downloading.
www.intersil.com/data/sm/index.asp
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under Any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEU Immunity . . . . . . . . . . . . <1 x 10
-10
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm
2
)
• Input Logic Levels. . . . V
IL
= (0.3)(V
CC
), V
IH
= (0.7)(V
CC
)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . .
±8mA
(Min)
• Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 15ns (Max)
Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
Ordering Information
ORDERING NUMBER
5962F9860301VCC
ACS04D/SAMPLE-03
5962F9860301VXC
ACS04K/SAMPLE-03
5962F9860301V9A
INTERNAL MKT. NUMBER
ACS04DMSR-03
ACS04D/SAMPLE-03
ACS04KMSR-03
ACS04K/SAMPLE-03
ACS04HMSR-03
TEMP. RANGE (
o
C)
-55 to 125
25
-55 to 125
25
25
PACKAGE
14 Ld SBDIP
14 Ld SBDIP
14 Ld Flatpack
14 Ld Flatpack
Die
DESIGNATOR
CDIP2-T14
CDIP2-T14
CDFP4-F14
CDFP4-F14
N/A
Pinouts
ACS04MS
(SBDIP)
TOP VIEW
A1 1
Y1 2
A2 3
Y2 4
A3 5
Y3 6
GND 7
14 V
CC
13 A6
12 Y6
11 A5
10 Y5
9 A4
8 Y4
ACS04MS
(FLATPACK)
TOP VIEW
A1
Y1
A2
Y2
A3
Y3
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
A6
Y6
A5
Y5
A4
Y4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
ACS04MS
Die Characteristics
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm
±25µm
(20.6 mils
±1
mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
METALLIZATION: AI
Metal 1 Thickness: 0.7µm
±0.1µm
Metal 2 Thickness: 1.0µm
±0.1µm
SUBSTRATE POTENTIAL:
Unbiased Insulator
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm
±0.15µm
SPECIAL INSTRUCTIONS:
Bond V
CC
First
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 10
5
A/cm
2
Transistor Count: 82
Metallization Mask Layout
ACS04MS
Y1
(2)
A1
(1)
V
CC
(14)
A6
(13)
A2 (3)
(12) Y6
Y2 (4)
(11) A5
NC
NC
A3 (5)
(10) Y5
(6)
Y3
(7)
GND
(8)
Y4
(9)
A4
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
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Intersil Corporation
P. O. Box 883, Mail Stop 53-204
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