The UT54ACS34 and the UT54ACTS34 are hex noninvertering
buffers. The circuits perform the Boolean functions Y = A.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUT
A
H
L
OUTPUT
Y
H
L
PINOUTS
14-Pin DIP
Top View
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
A6
Y6
A5
Y5
A4
Y4
14-Lead Flatpack
Top View
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
A6
Y6
A5
Y5
A4
Y4
LOGIC DIAGRAM
LOGIC SYMBOL
(1)
(3)
(5)
(9)
(11)
(13)
1
(2)
Y1
(4)
Y2
(6)
Y3
(8)
Y4
(10)
Y5
(12)
Y6
A1
A2
A3
A4
A5
A6
A1
Y1
A2
Y2
A3
Y3
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
A4
Y4
A5
Y5
A6
Y6
1
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
1.8
10
1.6
mW/
MHz
μA
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
0.40
0.25
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
V
V
OH
V
I
OS
I
OL
mA
mA
3
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
4
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V
±10%;
V
SS
= 0V
1
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
[align=left][color=#000000][b][size=3]LPC800_MINI_KIT Playing Notes[/size][/b] I had some free time recently, and I became interested, so I started playing with this small board and sorting out this t...
[b]1-8-2-4. Calculation of energy storage filter inductance and capacitance parameters of half-bridge switching power supply[/b] The calculation of energy storage filter inductance and capacitance par...
Oh, I can't post pictures here, it's really inconvenient... Picture 1: Guess who I am? :$Picture 2: I was very impressed by the solar-powered human scale solution from Xinhai that I saw at the exhibit...
[b][size=13.5pt][font=宋体]Power supply debugging and installation issues[/font] [/size][/b][size=10.5pt][font=宋体]Produced by Chuangyi Electronics, Chuangyi knows more about electronics, [url=http://52e...
I'm looking for a text tutorial for altium designer summer09. Video tutorials are also fine. Please send them to my email [email]731658842@qq.com[/email]. I'd be very grateful....
On August 25th, TSMC, the world's leading contract chip manufacturer, attracted significant attention for its decision to build a chip manufacturing facility in Arizona. TSMC primarily manufactures...[Details]
According to foreign media reports, researchers at the University of Surrey have developed an artificial intelligence system that can accurately locate the location of equipment in densely populate...[Details]
1 Source of creativity
With the further development of electronic technology, electronic pets have gradually entered people's family life. At present, there are two main categories of relative...[Details]
With the development of science, the use of variable frequency technology is becoming more and more widespread, and it is used in both industrial equipment and household appliances. Inverter air co...[Details]
Compared to cloud databases, minicomputers are purpose-built for decentralized, rugged computing at the edge of the network. By moving applications, analytics, and processing services closer to the...[Details]
HTTP is the abbreviation of Hypertext Transfer Protocol. It is an application protocol based on TCP/IP communication protocol used to transmit HTML and image files. It is an application-level objec...[Details]
Common methods for troubleshooting roller press bearing wear include repair welding, thermal spraying, brush plating, and scrapping and replacement. However, these methods are often subject to asse...[Details]
For new energy vehicles, the importance of batteries is unquestionable. Not only does it determine the performance of the vehicle, but the battery density also has a great relationship with the veh...[Details]
Electric vehicles will revolutionize transportation, changing fuel consumption, carbon emissions, costs, maintenance, and driving habits. Currently, a major selling point for electric vehicles is t...[Details]
Shanghai, China, August 21, 2025 –
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced the launch of the TLX9161T
, an automotive photorelay in a compact SO12L-T pa...[Details]
introduction
With the development of society, people's requirements for the quality of refrigerated and frozen foods are constantly improving. The changes in food appearance and nutritional co...[Details]
On August 20, Reuters reported that two sources revealed that U.S. Commerce Secretary Howard Lutnick is exploring the possibility of using CHIPS Act funds in exchange for equity stakes in chip manu...[Details]
ESD protection diodes are specialized for small-signal ESD protection or surge protection TVS arrays, often used for multi-circuit protection. Their small package size, low on-state voltage, high i...[Details]
Deep in the laboratory, a seemingly ordinary piece
of
battery
material
was fed into the China Advanced Research Reactor (CARR). Scientists activated the neutron depth profiling device,...[Details]
Amid the rapid advancement of automotive intelligence, on-board storage has become a thorny bottleneck restricting the "large-scale popularization" of advanced assisted driving.
On the o...[Details]
NXP MCU
京公网安备 11010802033920号
EEWORLD
