MBRM140
Surface Mount
Schottky Power Rectifier
POWERMITE
®
Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop- reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles,
<
1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are ac/dc and dc-dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical.
Features:
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
CATHODE
ANODE
•
•
•
•
•
•
•
•
•
•
•
Low Profile - Maximum Height of 1.1 mm
Small Footprint - Footprint Area of 8.45 mm2
Low V
F
Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
Powermite is JEDEC Registered as DO-216AA
Case: Molded Epoxy
Epoxy Meets UL94V-0 at 1/8″
Weight: 62 mg (approximately)
Device Marking: BCJ
Lead and Mounting Surface Temperature for Soldering Purposes.
260°C Maximum for 10 Seconds
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
Mechanical Characteristics:
M
BCJ
BCJ
M
= Device Code
= Date Code
ORDERING INFORMATION
Device
Package
POWERMITE
Shipping
3000/Tape & Reel
MAXIMUM RATINGS
Please See the Table on the Following Page
MBRM140T1
MBRM140T3
POWERMITE 12,000/Tape & Reel
©
Semiconductor Components Industries, LLC, 2002
1
December, 2002 - Rev. 1
Publication Order Number:
MBRM140/D
MBRM140
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated V
R
, T
C
= 110°C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
C
= 110°C)
Non-Repetitive Peak Surge Current
(Non-Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
T
J
dv/dt
Value
40
Unit
V
1.0
2.0
50
-55 to 150
-55 to 125
10,000
A
A
A
°C
°C
V/ms
THERMAL CHARACTERISTICS
Thermal Resistance - Junction-to-Lead (Anode) (Note 1)
Thermal Resistance - Junction-to-Tab (Cathode) (Note 1)
Thermal Resistance - Junction-to-Ambient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
R
tjl
R
tjtab
R
tja
35
23
277
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(V
R
= 40 V)
(V
R
= 20 V)
2. Pulse Test: Pulse Width
≤
250
µs,
Duty Cycle
≤
2%.
I
R
V
F
T
J
= 25°C
0.36
0.55
0.85
T
J
= 25°C
0.5
0.15
T
J
= 85°C
0.30
0.515
0.88
T
J
= 85°C
25
18
mA
V
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2
MBRM140
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
10
1.0
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
T
J
= -40°C
1.0
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
0.1
0.1
0.3
0.5
0.7
0.9
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1
0.1
0.3
0.5
0.7
0.9
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
Figure 2. Maximum Forward Voltage
10E-3
I
R
, REVERSE CURRENT (AMPS)
100E-3
T
J
= 85°C
10E-3
1.0E-3
T
J
= 85°C
100E-6
T
J
= 25°C
10E-6
1.0E-3
T
J
= 25°C
100E-6
1.0E-6
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
10E-6
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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3
MBRM140
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
35
45
55
65
75
85
I
pk
/I
o
= 10
I
pk
/I
o
= 20
SQUARE WAVE
I
pk
/I
o
=
p
I
pk
/I
o
= 5
dc
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
FREQ = 20 kHz
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
O
, AVERAGE FORWARD CURRENT (AMPS)
I
pk
/I
o
= 10
I
pk
/I
o
= 20
I
pk
/I
o
=
p
SQUARE
I
pk
/I
o
= 5
WAVE
dc
95
105
115 125
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
1000
T
J
, DERATED OPERATING TEMPERATURE (_C)
125
Figure 6. Forward Power Dissipation
C, CAPACITANCE (pF)
115
T
J
= 25°C
105
R
tja
= 33.72°C/W
95
51°C/W
69°C/W
85
75
0
5.0
10
15
20
25
30
35
40
V
R
, DC REVERSE VOLTAGE (VOLTS)
83.53°C/W
96°C/W
100
10
0
5.0
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
= T
Jmax
- r(t)(Pf + Pr) where
T
J
may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
- r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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4
MBRM140
R
(T)
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
T, TIME (s)
0.1
1.0
10
100
Figure 9. Thermal Response Junction to Lead
R
(T)
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
20%
0.1
10%
5.0%
0.01
2.0%
Rtjl(t) = Rtjl*r(t)
1.0%
0.001
0.00001
0.0001
0.001
0.01
0.1
T, TIME (s)
1.0
10
100
1,000
Figure 10. Thermal Response Junction to Ambient
0.105
2.67
0.025
0.635
0.030
0.762
0.100
2.54
inches
mm
Minimum Recommended Footprint
0.050
1.27
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