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5KP110C

Description
5000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size79KB,4 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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5KP110C Overview

5000 W, BIDIRECTIONAL, SILICON, TVS DIODE

DATA SHEET
5KP
SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE
FEATURES
1.0(25.4)MIN.
5.0 to 220 Volts
PEAK PULSE POWER
5000 Watts
P-600
Unit: inch(mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• 5000W Peak Pulse Power capability at on 10/1000µs waveform
• Excellent clamping capability
• Low zener impedance
• Repetition rate(Duty Cycle):.05%
• Fast response time: typically less than 1.0 ps from 0 volts to BV min
.052(1.3)
.048(1.2)
.360(9.1)
• Typical IR less than 1µA above 10V
.340(8.6)
1.0(25.4)MIN.
MECHANICALDATA
Case: JEDEC P-600 molded plastic
Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denoted cathode except Bipolar
Mounting Position: Any
Weight: 0.07 ounce, 2.1 gram
.360(9.1)
.340(8.6)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 5KP5.0 thru types 5KP220
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
Rati ng
Peak Power D i ssi pati on at T
A
=25
O
C , T P=1ms(Note 1)
Steady State Power di ssi pati on at
T
L
= 7 5
O
C
Lead Lengths .375", (95mm) (Note 2)
Peak Forward Surge C urrent, 8.3ms Si ngle Half Si ne-Wave
Superi mposed on Rated Load (JEC ED Method) (Note 3)
Operati ng Juncti on and Storage Temperature Range
Symbol
P
PK
P
D
I
FSM
T
J
,T
STG
Value
5000
8.0
400
-55 to +175
Uni ts
Watts
Watts
Amps
O
C
NOTES:
1.Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°Cper Fig. 2.
2.Mounted on Copper Leaf area of 0.79in
2
(20mm
2
).
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
STAD-NOV.11.2003
PAGE . 1
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