5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Supressors
Stand-off Voltage
5.0 to 110V
Peak Pulse Power
5000W
Case Style P600
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 5000W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.05%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Devices with V
(BR)
> 10V I
D
are typically less than 1.0µA
• Available in uni-directional polarity only
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
Mechanical Data
Case:
Molded plastic body over glass passivated junction
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Polarity:
The color band denotes the cathode, which is
positive with respect to the anode under normal TVS
operation
Mounting Position:
Any
Weight:
0.07 oz., 2.1 g
Packaging codes/options:
1/750 ea. per Bulk Box
4/800 ea. per 13" Reel (52mm Tape)
23/300 ea. per Ammo Box (52mm Tape)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Characteristics
Parameter
Peak pulse power dissipation with a 10/1000µs waveform
(1)
Peak pulse current with a 10/1000µs waveform
(1)
Steady state power dissipation at T
L
= 75°C
lead lengths 0.375” (9.5mm)
(2)
Peak forward surge current, 8.3ms single half sine-wave
(3)
Instantaneous forward voltage at 100A
(3)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5.
(3) Measured on 8.3ms single half sine-wave or equivalent square wave,
duty cycle = 4 pulses per minute maximum
Ratings at 25°C unless otherwise noted.
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
Minimum 5000
See next table
8.0
600
3.5
–55 to +175
Unit
W
A
W
A
V
°C
Document Number 88308
23-Jan-03
www.vishay.com
1
5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Breakdown Voltage
V
(BR)
(V)
(1)
MIN
MAX
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
7.30
7.00
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
31.9
38.0
34.4
40.7
36.8
44.9
40.6
T
A
= 25°C unless otherwise noted
Test
Current
at I
T
(mA)
50
50
50
50
50
50
50
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
2000
2000
5000
5000
2000
2000
1000
1000
250
250
150
150
50
50
20
20
15
15
10
10
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
521
543
439
485
407
446
376
417
350
388
333
368
314
347
296
325
266
294
249
275
227
251
210
233
194
216
186
205
174
192
164
181
155
171
140
154
127
141
116
129
107
119
119
100
110
93.5
103
84.7
93.8
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
42.1
50.1
45.4
53.5
48.4
59.0
53.3
Maximum
Temperature
Coefficient
of V
(BR)
(% /
°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
Device Type
5KP5.0
5KP5.0A
5KP6.0
5KP6.0A
5KP6.5
5KP6.5A
5KP7.0
5KP7.0A
5KP7.5
5KP7.5A
5KP8.0
5KP8.0A
5KP8.5
5KP8.5A
5KP9.0
5KP9.0A
5KP10
5KP10A
5KP11
5KP11A
5KP12
5KP12A
5KP13
5KP13A
5KP14
5KP14A
5KP15
5KP15A
5KP16
5KP16A
5KP17
5KP17A
5KP18
5KP18A
5KP20
5KP20A
5KP22
5KP22A
5KP24
5KP24A
5KP26
5KP26A
5KP26A
5KP28
5KP28A
5KP30
5KP30A
5KP33
5KP33A
www.vishay.com
2
Document Number 88308
23-Jan-03
5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Breakdown Voltage
V
(BR)
(V)
(1)
MIN
MAX
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.1
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.6
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.2
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
96.9
78.6
95.1
86.0
102
92.1
106.0
95.8
115
104
122
111
136
123
149
135
T
A
= 25°C unless otherwise noted
Test
Current
at I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Stand-off
Voltage
V
WM
(V)
36.0
36.0
40.0
40.0
43.0
43.0
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
85.0
85.0
90.0
90.0
100
100
110
110
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
77.8
86.1
70.0
77.5
65.2
72.0
62.3
68.8
58.5
64.6
54.9
60.7
51.9
57.4
48.5
53.4
46.7
51.7
43.9
48.5
40.0
44.2
37.3
41.3
36.0
39.7
33.1
36.5
31.3
34.2
27.9
30.9
25.5
28.2
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
94
107
97
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
Maximum
Temperature
Coefficient
of V
(BR)
(% /
°C)
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.112
0.112
Device Type
5KP36
5KP36A
5KP40
5KP40A
5KP43
5KP43A
5KP45
5KP45A
5KP48
5KP48A
5KP51
5KP51A
5KP54
5KP54A
5KP58
5KP58A
5KP60
5KP60A
5KP64
5KP64A
5KP70
5KP70A
5KP75
5KP75A
5KP78
5KP78A
5KP85
5KP85A
5KP90
5KP90A
5KP100
5KP100A
5KP110
5KP110A
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs I
T
=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All items and symbols are consistent with ANSI/IEEE C62.35
Application
The 5KP series of high power transient voltage suppressors were designed to be used on the output of switching power supplies. These devices
may be used to replace crowbar circuits. Both the 5 and 10 percent voltage tolerances are referenced to the power supply output voltage level.
They are able to withstand high levels of peak current while allowing a circuit breaker to trip or a fuse blow before shorting. This will enable the
user to reset the breaker or replace the fuse and continue operation. For this type operation, it is recommended that a sufficient mounting
surface be used for dissipating the heat generated by the Transient Voltage Suppressor during the transient or over-voltage condition.
Transient Voltage Suppressors are Silicon PN Junction devices designed for absorption of high voltage transients associated with power
disturbances, switching and induced lighting effects.
Document Number 88308
23-Jan-03
www.vishay.com
3
5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25
O
C unless otherwise noted)
Fig. 1 - Peak Pulse Power
Rating Curve
P
PPM
, Peak Pulse Power (kW)
Non-repetitive pulse
waveform shown in
Fig. 3 T
A
= 25°C
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
Fig. 2 - Pulse Power Derating Curve
100
100
75
10
50
1.0
25
0.1
0.1µs 1.0µs
100µs
10µs
td, Pulse Width
1.0ms
10ms
0
0
25 50 75 100 125 150 175 200
T
A
- Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
Fig. 4 - Typical Junction Capacitance
100,000
C
J
, Junction Capacitance (pF)
T
J
= 25°C
f = 1 MHz
Vsig = 50mVp-p
Measured at
Zero Bias
Measured at
Stand-off Voltage,
V
WM
I
PPM
– Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
10,000
Half Value – IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
1,000
td
0
100
0
1.0
2.0
3.0
4.0
1
t – Time (ms)
10
100
V
WM
– Reverse Stand-off Voltage (V)
200
I
FSM
, Peak Forward Surge Current (A)
Fig. 5 - Steady State Power
Derating Curve
8
P
PM(AV)
, Steady State Power
Dissipation (W)
60 H
Z
Resistive or Inductive Load
Fig. 6 - Maximum Non-repetitive Forward
Surge Current
500
450
400
350
300
250
200
1
10
Number of Cycles at 60 H
Z
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
6
4
0.375" (9.5mm)
Lead Length
2
0.8 x 0.8 x 0.040" (20 x 20mm)
Copper Heat Sink
0
0
25
50 75 100 125 150 175 200
T
L
, Lead Temperature (°C)
www.vishay.com
4
Document Number 88308
23-Jan-03
Embedded System
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