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L660/805/940-35B42

Description
Visible LED,
CategoryLED optoelectronic/LED    photoelectric   
File Size255KB,1 Pages
ManufacturerUshio Opto Semiconductors Inc.
Download Datasheet Parametric View All

L660/805/940-35B42 Overview

Visible LED,

L660/805/940-35B42 Parametric

Parameter NameAttribute value
MakerUshio Opto Semiconductors Inc.
Reach Compliance Codeunknown
Base Number Matches1
epitex
Opto-Device & Custom LED
Φ5
STEM TYPE LED L660/805/940-35B42
Lead (Pb) Free Product RoHS compliant
L660/805/940-35B42
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip material
(2) Peak wavelength
4) Package
(1) Stem
(2) Lens
multi-wavelength LED Lamp
L660/805/940-35B42
AlGaAs, GaAs
660, 805, 940nm
TO-18 5pin type
Φ5mm
unspherical glass
multi-wavelength LED
♦Outer
dimension(Unit: mm)
L660/805/940-35B42 consists of an AlGaAs’(660, 805nm),
and GaAs’(940nm) LED mounted on TO-18 stem
with an unsherical glass lens.
Absolute Maximum Ratings [Ta=25°C]
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
P
D
I
F
I
F
V
R
T
OPR
T
STG
Maximum Rated Value
660
120
50
200
805
170
100
500
5
940
140
100
1000
Unit
mW
mA
mA
V
°C
°C
-20 ~ +80
-30 ~ +100
Soldering Temperature T
SOL
240
°C
‡Soldering condition: Soldering condition must be completed within 3 seconds at 240°C
and is allowed in the area apart 3mm from the bottom of the lamp.
Electro-Optical Characteristics [Ta=25°C]
Symbol Wavelength Condition
Minimum
Typical
Maximum
Unit
660
V
F
I
R
660
P
O
805
940
660
650
I
F
=20mA
795
935
I
F
=20mA
I
F
=20mA
805
940
V
R
=5V
2.9
3.5
2.5
660
805
940
20
30
nm
670
915
955
nm
mW
I
F
=20mA
1.9
1.5
1.2
2.2
1.7
1.3
10
uA
V
λ
P
805
940
660
∆λ
805
940
45
‡Total Radiated Power is measured by Photodyne #500
EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan
Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com

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