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3SK87L

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size92KB,4 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

3SK87L Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

3SK87L Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionPLASTIC PACKAGE-4
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-PRDB-F4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)15 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

3SK87L Related Products

3SK87L 3SK87K 3SK87
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
Maker NEC Electronics NEC Electronics NEC Electronics
package instruction PLASTIC PACKAGE-4 PLASTIC PACKAGE-4 PLASTIC PACKAGE-4
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.025 A 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.03 pF 0.03 pF 0.03 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code O-PRDB-F4 O-PRDB-F4 O-PRDB-F4
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 15 dB 15 dB 15 dB
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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