DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD444008L
4M-BIT CMOS FAST SRAM
512K-WORD BY 8-BIT
Description
The
μ
PD444008L is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
μ
PD444008L is packaged in 36-pin PLASTIC SOJ.
Features
•
524,288 words by 8 bits organization
•
Fast access time : 8, 10, 12, ns (MAX.)
•
Output Enable input for easy application
•
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
185
165
155
185
165
155
At standby
5
μ
PD444008LLE-A8
μ
PD444008LLE-A10
μ
PD44008LLE-A12
μ
PD444008LLE-A8-A
μ
PD444008LLE-A10-A
μ
PD444008LLE-A12-A
36-pin PLASTIC SOJ
(10.16 mm (400))
8
10
12
8
10
12
Remark
Products with -A at the end of the part number are lead-free products.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M14429EJ6V0DS00 (6th edition)
Date Published September 2006 NS CP(K)
Printed in Japan
1999
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μ
PD444008L
Pin Configuration (Marking Side)
/××× indicates active low signal.
36-pin PLASTIC SOJ (10.16 mm (400))
A0
A1
A2
A3
A4
/CS
I/O1
I/O2
V
CC
GND
I/O3
I/O4
/WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
/OE
I/O8
I/O7
GND
V
CC
I/O6
I/O5
A14
A13
A12
A11
A10
NC
A0 - A18
/CS
/WE
/OE
V
CC
GND
NC
: Address Inputs
: Chip Select
: Write Enable
: Output Enable
: Power supply
: Ground
: No connection
I/O1 - I/O8 : Data Inputs / Outputs
Remark
Refer to
Package Drawing
for the 1-pin index mark.
2
Data Sheet M14429EJ6V0DS
μ
PD444008L
Electrical Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Input / Output voltage
Operating ambient temperature
Storage temperature
Symbol
V
CC
V
T
T
A
T
stg
Condition
–0.5
–0.5
Rating
Note
Note
Unit
V
V
°C
°C
to +4.0
to +4.0
0 to 70
–55 to +125
Note
–2.0 V (MIN.) (pulse width : 2 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
V
CC
V
IH
V
IL
T
A
Condition
MIN.
3.0
2.0
–0.3
0
Note
TYP.
3.3
MAX.
3.6
V
CC
+0.3
+0.8
70
Unit
V
V
V
°C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
4
Data Sheet M14429EJ6V0DS
μ
PD444008L
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
Test condition
V
IN
= 0 V to V
CC
V
I/O
= 0 V to V
CC
,
/CS = V
IH
or /OE = V
IH
or /WE = V
IL
Operating supply current
I
CC
/CS = V
IL
,
I
I/O
= 0 mA,
Minimum cycle time
Standby supply current
I
SB
I
SB1
Cycle time : 8 ns
Cycle time : 10 ns
Cycle time : 12 ns
185
165
155
40
5
mA
mA
MIN.
–2
–2
TYP.
MAX.
+2
+2
Unit
μ
A
μ
A
/CS = V
IH
, V
IN
= V
IH
or V
IL
/CS
≥
V
CC
– 0.2 V,
V
IN
≤
0.2 V or V
IN
≥
V
CC
– 0.2 V
High level output voltage
Low level output voltage
V
OH
V
OL
I
OH
= –4.0 mA
I
OL
= +8.0 mA
2.4
0.4
V
V
Remark
V
IN
: Input voltage
V
I/O
: Input / Output voltage
Capacitance (T
A
=
25
°C,
f = 1 MHz)
Parameter
Input capacitance
Input / Output capacitance
Symbol
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
Test condition
MIN.
TYP.
MAX.
6
8
Unit
pF
pF
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These parameters are periodically sampled and not 100% tested.
Data Sheet M14429EJ6V0DS
5
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