epitex
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Thermal Resistance
Operating Temperature
Storage Temperature
Soldering Temperature
Opto-Device & Custom LED
High Power Top LED SMB735-1100-05
Lead ( Pb ) Free Product – RoHS Compliant
SMB735-1100-05
High Power Top LED
SMB735-1100-05
AlGaAs
1000um*1000um
1pce
735nm typ.
Silver Plated on Copper
PPA Resin
Epoxy Resin
Symbol
P
D
I
F
I
FP
V
R
R
thja
T
OPR
T
STG
T
SOL
High Power type Top LED with Lens
SMB735-1100-05 is an AlGaAs LED mounted on copper heat sink with a
5*5
mm package
These devices are available to be operated and 800mW/sr at IFP=4A.
♦Outer
dimension (Unit: mm)
anode
cathode
land pattern for solder
a1 a2 a3
a1 a2 a3
heat sink
c1 c2 c3
c1 c2 c3
♦Absolute
Maximum Ratings
Maximum Rated Value
2000
800
4000
5
10
-30 ~ +85
-30 ~ +100
255
Unit
mW
mA
mA
V
K/W
°C
°C
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 255°C
‡Thermal resistance: junction – ambient air flow
♦Electro-Optical
Characteristics [Ta=25°C]
Item
Forward Voltage
Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Symbol
V
F
V
FP
P
O
I
E
λ
P
∆λ
θ
1/2
tr
tf
Condition
I
F
=600mA
I
FP
=4A
I
F
=600mA
I
FP
=4A
I
F
=600mA
I
FP
=4A
I
F
=100mA
I
F
=100mA
I
F
=100mA
I
F
=100mA
I
F
=100mA
Minimum
Typical
1.9
4.0
170
1150
120
800
735
25
±40
80
80
Maximum
2.3
Unit
V
V
mW
mW/sr
nm
nm
deg.
ns
ns
100
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
Embedded System
京公网安备 11010802033920号
EEWORLD
