DCR1610F28
Phase Control Thyristor
Preliminary Information
DS5928-1.1 July 2009 (LN26822)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
2800V
1610A
21500A
1500V/µs
1000A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
2800
2600
2400
Conditions
*
Higher dV/dt selections available
DCR1610F28
DCR1610F26
DCR1610F24
T
vj
= -40° to 125°
C
C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code: F
(See Package Details for further information)
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1610F28
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR1610F28
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60° unless stated otherwise
C
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1607
2524
2353
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°
C
V
R
= 0
Max.
21.5
2.3
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 23kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
22.0
Max.
0.0184
0.0333
0.0418
0.004
0.008
135
125
125
25.0
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C
°
C
°
C
kN
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DCR1610F28
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°
C
To 67% V
DRM
, T
j
= 125° gate open
C,
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10 ,
t
r
< 0.5µs, T
j
= 125°
C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
100
1500
250
1000
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
100A to 1000A at T
case
= 125°
C
1000A to 4000A at T
case
= 125°
C
100A to 1000A at T
case
= 125°
C
1000A to 4000A at T
case
= 125°
C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°
C
-
-
-
-
-
0.8
0.91
0.35
0.245
3
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
T
j
= 125° V
R
= 100V, dI/dt = 5A/µs,
C,
dV
DR
/dt = 20V/µs linear to 2500V
-
600
µs
Q
S
I
L
I
H
Stored charge
Latching current
Holding current
I
T
= 1000A, tp = 1000us,T
j
= 125°
C,
dI/dt =5A/µs,
T
j
= 25° V
D
= 5V
C,
T
j
= 25° R
G-K
= , I
TM
= 500A, I
T
= 5A
C,
2500
-
-
3500
3
300
µC
A
mA
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DCR1610F28
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°
C
At 50% V
DRM,
T
case
= 125°
C
V
DRM
= 5V, T
case
= 25°
C
At 50% V
DRM,
T
case
= 125°
C
Max.
1.5
0.4
250
10
Units
V
V
mA
mA
CURVES
4000
Instantaneous on-state current, I
T
- (A)
3500
3000
2500
2000
1500
1000
500
0
0.80
max 125ºC
min 25ºC
max 25ºC
min 125ºC
1.00
1.20
1.40
1.60
1.80
2.00
2.20
Instantaneous on-state voltage, V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D. I
T
Where
A = 0.746516
B = -0.012797
C = 0.000146
D = 0.010555
these values are valid for T
j
= 125° for I
T
100A to 4000A
C
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DCR1610F28
SEMICONDUCTOR
16
14
Mean power dissipation - (kW)
12
10
8
6
4
2
0
0
1000
2000
3000
Mean on-state current, I
T(AV)
- (A)
4000
180
120
90
60
30
130
120
(
o
C )
110
100
90
80
70
60
50
40
30
20
10
0
0
500
1000
1500
2000
2500
Mean on-state current, I
T(AV)
- (A)
180
120
90
60
30
Fig.3 On-state power dissipation – sine wave
Maximum case temperature, T
case
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
125
- (° C)
180
120
90
60
30
16
14
Mean power dissipation - (kW)
12
10
8
6
4
2
d.c.
180
120
90
60
30
Heatsink
100
Maximum heatsink temperature, T
75
50
25
0
0
500
1000
1500
2000
2500
0
0
1000
2000
3000
4000
Mean on-state current, I
T(AV)
- (A)
5000
Mean on-state current, I
T(AV)
- (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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