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DB106

Description
1 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size106KB,4 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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1 A, SILICON, BRIDGE RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
1N6267- - -1N6303A
BREAKDOWN VOLTAGE: 6.8 --- 200 V
PEAK PULSE POWER: 1500 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
For devices with V
(BR)
10V,ID are typically less than 1.0μA
/ 10 seconds,
High tem perature soldering guaranteed:265
DO-201AE
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-201AE, molded plastic
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
Weight: 0.032 ounces,
0.9
grams
Mounting position: Any
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak pulse current w ith a 10/1000μs w aveform (NOTE 1)
Steady state pow er dissipation at T
L
=75
fffff
lead lengths 0.375"(9.5mm) (NOTE 2)
Peak forw ard surge current, 8.3ms single half
ffffsine-w
ave superimposed on rated load (JEDEC Method) (NOTE 3)
Maximum instantaneous forw ard voltage at
100
A for unidirectional only (NOTE 4)
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
VALUE
Minimum 1500
SEE TABLE 1
6.5
200.0
3.5/5.0
20
75
-50---+175
UNIT
W
A
W
A
V
/W
/W
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
200V, and V
F
=5.0 Volt max. for devices of V
(BR)
>200V
www.galaxycn.com
Document Number 0285011
BL
GALAXY ELECTRICAL
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