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APM2513NUC-TRG

Description
Power Field-Effect Transistor, 40A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size180KB,11 Pages
ManufacturerAmerican Power Devices Inc.
Environmental Compliance
Download Datasheet Parametric Compare View All

APM2513NUC-TRG Overview

Power Field-Effect Transistor, 40A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3

APM2513NUC-TRG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAmerican Power Devices Inc.
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)80 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.013 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
APM2513NU
N-Channel Enhancement Mode MOSFET
Features
25V/40A,
R
DS(ON)
=10.5mΩ (typ.) @ V
GS
=10V
R
DS(ON)
=16mΩ (typ.) @ V
GS
=4.5V
Pin Description
G
D
S
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G
Top View of TO-252
D
Applications
Power Management in Desktop Computer or
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
APM2513N
Assembly Material
Handling Code
Temperature Range
Package Code
APM2513N
U:
Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
XXXXX - Date Code
APM2513N
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.2 - Nov., 2008
1
www.anpec.com.tw

APM2513NUC-TRG Related Products

APM2513NUC-TRG APM2513NUC-TRL
Description Power Field-Effect Transistor, 40A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3 Power Field-Effect Transistor, 40A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker American Power Devices Inc. American Power Devices Inc.
Parts packaging code TO-252 TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 4
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 80 mJ 80 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (ID) 40 A 40 A
Maximum drain-source on-resistance 0.013 Ω 0.013 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-252
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 100 A 100 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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