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MAC229A10FP

Description
4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size91KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MAC229A10FP Overview

4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS,

MAC229A10FP Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE
Maximum DC gate trigger current5 mA
Maximum DC gate trigger voltage2 V
Maximum holding current15 mA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum leakage current2 mA
Number of components1
Number of terminals3
Maximum on-state voltage1.8 V
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current8 A
Maximum repetitive peak off-state leakage current10 µA
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC229AFP/D
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
Center Gate Geometry for Uniform Current Spreading
Gate Triggering Guaranteed in Three Modes (MAC229FP Series) or Four Modes
(MAC229AFP Series)
MAC229FP
Series
MAC229AFP
Series
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1)
(TJ = –40 to 110°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC229-4FP, MAC229A4FP
MAC229-6FP, MAC229A6FP
MAC229-8FP, MAC229A8FP
MAC229-10FP, MAC229A10FP
On-State RMS Current (TC = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing
(t = 8.3 ms)
Symbol
VDRM
Value
Unit
Volts
200
400
600
800
IT(RMS)
ITSM
I2t
IGM
VGM
PGM
PG(AV)
TJ
Tstg
8
80
26
±2
±10
20
0.5
–40 to 110
–40 to 150
8
Amps
Amps
A2s
Amps
Volts
Watts
Watts
°C
°C
in. lb.
p
2
µs)
Peak Gate Voltage (t
p
2
µs)
Peak Gate Power (t
p
2
µs)
Peak Gate Current (t
Average Gate Power
(TC = 80°C, t
8.3 ms)
p
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
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