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2N6055

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size151KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
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Transistor

2N6055 Parametric

Parameter NameAttribute value
MakerCOMSET
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)8 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)100
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
surface mountNO
Nominal transition frequency (fT)4 MHz
Base Number Matches1
2N6053 PNP
2N6055 NPN
COMPLEMENTARY POWER DARLINGTON
The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration
and are mounted in Jedec TO-3 metal case.
They are intended for use in power linear and switching applications.
The complementary NPN type is the 2N6055
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
Ratings
#Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous
I
B
=0
I
E
=0
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
@ T
C
= 25°
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
Value
60
60
5.0
8.0
Unit
V
V
V
I
C
Collector Current
Peak
A
16
120
100
200
-65 to +200
mA
Watts
°C
°C
I
B
P
TOT
T
J
T
S
Base Current
Total Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
2N6053
2N6055
Value
1.75
Unit
°C/W
2N6053 PNP
COMSET SEMICONDUCTORS
1/3
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