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2N1486

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size331KB,4 Pages
ManufacturerVPT Inc
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Power Bipolar Transistor,

2N1486 Parametric

Parameter NameAttribute value
MakerVPT Inc
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2N1483, 2N1484, 2N1485, 2N1486
NPN Medium Power Silicon Transistor
Rev. V2
Features
Available in JAN, JANTX and JANTXV per MIL-PRF-19500/180
TO-8 Package
Ideal For Medium Power Applications That Require High Frequency
Switching in a Low Profile Package
Electrical Characteristics T
C
= +25
o
C unless otherwise specified)
Parameter
Test Conditions
I
C
= 100 mA dc
2N1483, 2N1485
2N1484, 2N1486
V
EB
= 1.5 V dc, I
C
= 0.25 mA dc
2N1483, 2N1485
2N1484, 2N1486
I
C
= 100 µA dc
2N1483, 2N1485
2N1484, 2N1486
V
EB
= 12 V dc
V
EB
= 1.5 V dc
V
CB
= 60 V dc, 2N1483, 2N1485
V
CB
= 100 V dc, 2N1484, 2N1486
V
CB
= 30 V dc, 2N1483, 2N1485
V
CB
= 50 V dc, 2N1484, 2N1486
Symbol Units
Min.
Max.
Collector
-
Emitter Breakdown Voltage
V
(BR)CEO
V dc
40
55
Collector
-
Emitter Breakdown Voltage
V
(BR)CEX
V dc
60
100
Collector
-
Base Breakdown Voltage
V
(BR)CBO
V dc
60
100
15
.25
.25
15
15
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
I
EBO
I
CEX
µA dc
mA dc
Collector
-
Base Cutoff Current
I
CBO1
µA dc
Forward Current Transfer Ratio
V
CE
= 4.0 Vdc, I
C
= 750 mA dc
2N1483, 2N1484
2N1485, 2N1486
h
FE2
-
20
35
60
100
Base
-
Emitter Voltage (non-saturated)
Collector
-
Emitter Saturation Voltage
V
CE
= 4.0V dc, I
C
= 750 mA dc
Ic = 750 mA dc
I
B
= 75 mA dc 2N1483, 2N1484
I
B
= 40 mA dc 2N1485, 2N1486
V
BE
V dc
2.0
1.20
0.75
V
CE(SAT)
V dc
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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