2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
NPN Dual Silicon Transistors
Rev. V1
Features
•
Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-
19500/355
•
TO-78 and U package types
•
Radiation Tolerant Levels M, D, P, L, and R
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Breakdown Voltage, Collector-Emitter
Collector
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Emitter
-
Base Cutoff Current
Forward
-
Current Transfer Ratio
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
Forward
-
Current Transfer Ratio
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
Forward
-
Current Transfer Ratio
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
Base
-
Emitter Saturation Voltage
Collector
-
Emitter Saturation Voltage
Forward-Current Transfer Ratio
(Gain Ratio)
Absolute Value of Base Emitter-Voltage
Differential
Test Conditions
V
CB
= 70 V dc
V
EB
= 6 V dc
I
C
= 10 mA dc
V
CB
= 45 V dc
V
CE
= 5 V dc
V
EB
= 5 V dc
Symbol Units
I
CBO1
I
EBO1
µA dc
µA dc
Min.
—
—
60
Max.
10
10
—
2
2
2
60
175
240
600
V
(BR)CEO
V dc
I
CBO2
I
CEO1
I
EBO2
nA dc
nA dc
nA dc
V
CE
= 5 V dc; I
C
= 10 µA dc
h
FE1
V
CE
= 5 V dc; I
C
= 100 µA dc
h
FE2
100
235
150
300
0.5
—
0.9
325
800
600
1000
1.0
0.3
1.1
V
CE
= 5 V dc; I
C
= 1 mA dc
I
C
= 1.0 mA dc; I
B
= 100 µA dc
I
C
= 1.0 mA dc; I
B
= 100 µA dc
V
CE
= 5 V dc; I
C
= 100 µA dc
h
FE3
V
BE(sat)1
V dc
V
CE(sat)1
V dc
h
FE2-1
—––
h
FE2-2
|V
BE1-
V
BE2
|1
mV
V
CE
= 5 V dc; I
C
= 10 µA dc
dc
—
5
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
NPN Dual Silicon Transistors
Rev. V1
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Absolute Value of Base Emitter-Voltage
Differential
Absolute Value of Base Emitter-Voltage
Differential
Base-Emitter-Voltage (Nonsaturated)
(Absolute Value of Differential Change
with Temperature)
Collector
-
Base Cutoff Current
Forward Current Transfer Ratio
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
Base-Emitter-Voltage (Nonsaturated)
(Absolute Value of Differential Change
with Temperature)
Small-Signal Short-Circuit Input
Impedance
Small-Signal Open-Circuit Reverse
Voltage Transfer Ratio
Small-Signal Open-Circuit Output
Admittance
Small-Signal Short-Circuit Forward
Current Transfer Ratio (magnitude h
fe
)
Open Circuit Output Capacitance
Noise Figure
Test 1
Test 2
Test 3
Test Conditions
V
CE
= 5 V dc; I
C
= 100 µA dc
Symbol Units
|V
BE1-
V
BE2
|2
Min.
—
Max.
3
mV dc
V
CE
= 5 V dc; I
C
= 1 mA dc
T
A
= +150
o
C
V
CE
= 500 V dc; Ic = 100 µA dc
T
A
= +125
o
C and +25
o
C
T
A
= +150
o
C
V
CB
= 45 V dc
T
A
=
-55
o
C
V
CE
= 5 V dc; I
C
= 10 µA dc
T
A
=
-55
o
C
V
CE
= 5 V dc; Ic = 100 µA dc
T
A
= +25
o
C and
-55
o
C
V
CE
= 5 V dc; I
C
= 1 mA dc; f = 1 kHz
|V
BE1-
V
BE2
|3
mV dc
—
5
|∆V
BE1-
V
BE2
∆T
A
|2
mV dc
—
1
I
CBO3
µA dc
—
2.5
h
FE4
20
50
|∆V
BE1-
V
BE2
∆T
A
|1
mV dc
—
0.8
h
ie
h
re
h
oe
| h
FE
|
kΩ
3
30
V
CE
= 5 V dc; I
C
= 1 mA dc; f = 1 kHz
1 x 10
-3
V
CE
= 5 V dc; I
C
= 1 mA dc; f = 1 kHz
µmhos
—
60
V
CE
= 5 V dc; I
C
= 0.5 mA dc; f = 20 MHz
3
20
V
CB
= 5 V dc; I
E
= 0 mA; 100 kHz ≤ f ≤ 1 MHz
V
CE
= 5 V dc; I
C
= 10 µA dc; R
g
= 10kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
C
obo
pF
—
5
F1
F2
F3
dB
dB
dB
—
5
3
3
Collector
-
Emitter Cutoff Current
V
CE
= 40 V dc
I
CES
nA dc
—
20
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
NPN Dual Silicon Transistors
Rev. V1
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
One Section
Both Sections
Total Power Dissipation
@ T
C
= +25°C
One Section
Both Sections
Thermal Resistance Junction to Ambient
One Section
Both Sections
Thermal Resistance Junction to Case
One Section
Both Sections
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
60 V dc
70 V dc
6.0 V dc
30 mA dc
P
T
(1)
200 mW
350 mW
P
T
(2)
300 mW
450 mW
875
o
C/W
500
o
C/W
R
ᶿJA
R
ᶿJC
583
o
C/W
388
o
C/W
-65°C
to +175°C
T
J
, T
STG
(1) For T
A
> +25
o
C, derate linearly 1.143 mW/
o
C, one section, 2.000 mW/
o
C, both sections
(2) For T
C
> +25
o
C, derate linearly 1.714 mW/
o
C, one section, 2.571 mW/
o
C, both sections
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
NPN Dual Silicon Transistors
Rev. V1
Outline Drawing (TO-78)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2919, 2N2919L, 2N2919U
2N2920, 2N2920L, 2N2920U
NPN Dual Silicon Transistors
Rev. V1
Outline Drawing (U)
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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