2N6784
IRFF210
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
N–CHANNEL
POWER MOSFET
ENHANCEMENT MODE
4.06 (0.16)
4.57 (0.18)
12.70
(0.500)
min.
0.89 max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
• REPETITIVE AVALANCHE RATING
• SIMPLE DRIVE REQUIREMENTS
5.08 (0.200)
typ.
• HERMETICALLY SEALED
2.54
(0.100)
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
3
APPLICATIONS
• FAST SWITCHING
45°
• MOTOR CONTROLS
• POWER SUPPLIES
Pin 3 - Drain and Case
TO39 Package (TO-205AF)
Pin 1 - Source
Underside View
Pin 2 - Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DS
I
D
@Tcase = 25°C
I
D
@Tcase = 100°C
I
DM
V
GS
P
D
@ T
case
= 25°C
R
θJ-C
R
θJ-A
T
J
,T
stg
Lead Temperature
Drain Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 1
Gate Source Voltage
Maximum Power Dissipation
Thermal Resistance Junction To Case
Thermal Resistance Junction To Ambient
Operating and Storage Temperature Range
( 1.6mm from case for 10 secs)
200V
2.25A
1.5A
9A
±20V
15W
8.3°C/W
175°C/W
-55 to +150°C
300°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6444
Issue 1
2N6784
IRFF210
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS
BV
DSS
Drain – Source Breakdown Voltage
V
GS(th)*
Gate Threshold Voltage
I
GSSF
I
GSSR
I
DSS
Gate Body Leakage Forward
Gate Body Leakage Reverse
Zero Gate Voltage Drain Current
V
GS
= 0
V
DS
= V
GS
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V.
V
GS
= 10V
V
GS
= 10V
V
DS
= 15V
V
GS
= 0
f = 1.0MHz
V
DD
= 100V
R
G
= 7.5Ω
(MOSFET switching times are essentially
independent of operating temperature.)
Test Conditions
I
D
= 1.0mA
I
D
= 250µA
Min.
200
2.0
Typ.
Max.
Unit
V
4.0
100
-100
nA
µA
Ω
S( )
140
55
8.6
pF
15
20
30
20
ns
Ω
V
GS
=0
T
C
= 125°C
I
D
= 1.5A
I
D
= 2.25A
I
DS
= 1.5A
V
DS
= 25V
0.9
25
250
1.5
1.725
R
DS(on)*
Static Drain Source On-State
Resistance
gfs*
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate To Source Charge
Gate To Drain (“Miller”) Charge
I
D
= 2.25A
V
GS
= 10V
V
DS
= 100V
I
D
= 2.25A
4.3
0.7
0.5
,
6.2
1.2
5.0
nC
I
S
I
SM
V
SD
t
rr
Q
RR
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
Modified MOS POWER
Continuous Source Current (Body
Diode)
Source Current (Body Diode)
Diode Forward Voltage
*
Reverse Recovery Time
Reverse Recovery Charge
symbol showing the intergal
/
5
2.25
A
9.0
1.5
350
3.0
V
ns
µC
P-N junction rectifier.
I
S
= 2.25A
T
J
= 25°C
I
F
= 2.25A
V
GS
= 0
T
J
= 25°C
d
i
/ d
t
=
100A/µs VDD = 50V
Notes
* Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6444
Issue 1
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