Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-226AA, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown |
| Other features | LOW NOISE |
| Configuration | SINGLE |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 2 pF |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 135 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 0.31 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2N5461 | BF245A | MFE823 | 3N128 | |
|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-226AA, 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 | Transistor | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | , | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Configuration | SINGLE | SINGLE | Single | SINGLE |
| FET technology | JUNCTION | JUNCTION | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | ENHANCEMENT MODE | DEPLETION MODE |
| Polarity/channel type | P-CHANNEL | N-CHANNEL | P-CHANNEL | N-CHANNEL |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| JEDEC-95 code | TO-92 | TO-92 | - | TO-72 |
| JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | - | O-MBCY-W4 |
| Number of components | 1 | 1 | - | 1 |
| Number of terminals | 3 | 3 | - | 4 |
| Maximum operating temperature | 135 °C | 150 °C | 175 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | - | METAL |
| Package shape | ROUND | ROUND | - | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | - | CYLINDRICAL |
| Maximum power dissipation(Abs) | 0.31 W | 0.3 W | 0.3 W | - |
| Certification status | Not Qualified | Not Qualified | - | Not Qualified |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | - | WIRE |
| Terminal location | BOTTOM | BOTTOM | - | BOTTOM |
| transistor applications | AMPLIFIER | AMPLIFIER | - | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | - | SILICON |
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