MITSUBISHI IGBT MODULES
CM200RL-24NF
HIGH POWER SWITCHING USE
CM200RL-24NF
¡I
C ...................................................................
200A
¡V
CES .........................................................
1200V
¡Insulated
Type
¡7-elements
in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
135
(6.05)
17.5
10.5
26
10.5
110
±0.5
26
10.5
(6.05)
11.7
(13)
18
18.7
B
1
8
10.5
A
N
20
48.75
10.5
1
1
1
P
13.75
4-φ5.5
MOUNTING HOLES
30.5
46.3
25
25
(13)
11
6-M5 NUTS
(6.05)
WP
VP
UP
16.5
20
B
10.5
CN
78
±0.5
110
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
(SCREWING DEPTH)
LABEL
4
24.1
–0.5
26.5
13
+1
(6.05)
U
V
W
P
UP-1
UP-2
B
CN-7
CN-8
N
CN-5
CN-6
U
CN-3
CN-4
VP-1
VP-2
V
WP-1
WP-2
W
CN-1
CN-2
CIRCUIT DIAGRAM
Feb.
2009
1
MITSUBISHI IGBT MODULES
CM200RL-24NF
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS
(Tj = 25
°
C, unless otherwise specified)
INVERTER PART
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
G-E Short
C-E Short
DC, T
C
= 72°C
*1
Pulse
Pulse
T
C
= 25°C
Conditions
Ratings
1200
±20
200
400
200
400
1160
Unit
V
V
A
A
A
A
W
(Note 2)
(Note 2)
BRAKE PART
Symbol
V
CES
V
GES
I
C
I
CM
P
C (Note 3)
V
RRM
I
FM
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 80°C
*1
Pulse
T
C
= 25°C
Clamp diode part
Clamp diode part
Conditions
Ratings
1200
±20
100
200
620
1200
100
Unit
V
V
A
A
W
V
A
(Note 2)
(COMMON RATING)
Symbol
T
j
T
stg
V
iso
—
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Conditions
Ratings
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
750
Unit
°C
°C
Vrms
N•m
N•m
g
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Feb.
2009
2
MITSUBISHI IGBT MODULES
CM200RL-24NF
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise specified)
INVERTER PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
G
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
External gate resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 20mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 200A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 200A, V
GE
= 15V
V
CC
= 600V, I
C
= 200A
V
GE
=
±15V
R
G
= 1.6Ω, Inductive load
I
E
= 200A
I
E
= 200A, V
GE
= 0V
IGBT part (1/6 module)
*1
FWDi part (1/6 module)
*1
Case to heat sink, Thermal compound Applied (1/6 module)
*2
T
j
= 25°C
T
j
= 125°C
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
Limits
Typ.
—
7
—
2.1
2.4
—
—
—
1000
—
—
—
—
—
9
—
—
—
0.051
—
Max.
1
8
0.5
3.1
—
35
3
0.68
—
130
70
400
350
150
—
3.8
0.11
0.17
—
21
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
Ω
BRAKE PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
V
FM
R
th(j-c)
Q
R
th(j-c)
R
R
G
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
External gate resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 10mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
I
F
= 100A
IGBT part
*1
Clamp diode part
*1
T
j
= 25°C
T
j
= 125°C
Min.
—
6
—
—
—
—
—
—
—
—
—
—
3.1
Limits
Typ.
—
7
—
2.1
2.4
—
—
—
500
—
—
—
—
Max.
1
8
0.5
3.0
—
17.5
1.5
0.34
—
3.8
0.20
0.28
31
Unit
mA
V
µA
V
nF
nF
nF
nC
V
K/W
K/W
Ω
*
1 : Case temperature (Tc) measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Feb.
2009
3
MITSUBISHI IGBT MODULES
CM200RL-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
400
350
300
250
200
V
GE
=
20V
4
15
13
T
j
= 25°C
12
V
GE
= 15V
3
2
11
150
100
50
0
0
2
4
6
8
10
9
10
1
T
j
= 25°C
T
j
= 125°C
0
0
50 100 150 200 250 300 350 400
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT I
E
(A)
7
5
3
2
10
T
j
= 25°C
8
6
10
2
7
5
3
2
4
I
C
= 400A
I
C
= 200A
I
C
= 80A
0
6
8
10
12
14
16
18
20
2
T
j
= 25°C
T
j
= 125°C
0
1
2
3
4
5
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
C
ies
SWITCHING TIME (ns)
7
5
3
2
t
d(off)
t
f
t
d(on)
t
r
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
1
7
5
3
2
10
2
7
5
3
2
C
oes
10
0
7
5
3
2
10
1
7
5
3
2
C
res
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 1
10
COLLECTOR CURRENT I
C
(A)
Feb.
2009
4
MITSUBISHI IGBT MODULES
CM200RL-24NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
7
5
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
Single Pulse,
7
5
T
C
= 25°C
3
Under the chip
2
I
rr
t
rr
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 1.6Ω
T
j
= 25°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
–1
7
5
3
2
10
–1
7
5
3
2
10
2
7
5
3
2
10
1 1
10
IGBT part:
10
–2
Per unit base =
7
5
R
th(j–c)
= 0.11K/W
FWDi part:
3
Per unit base =
2
R
th(j–c)
= 0.17K/W
10
–3
10
–2
7
5
3
2
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
EMITTER CURRENT I
E
(A)
TIME (s)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
10
2
7
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
10
2
7
SWITCHING LOSS (mJ/pulse)
SWITCHING LOSS (mJ/pulse)
5
3
2
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive load
C snubber at bus
Esw(on)
5
3
2
Esw(off)
Esw(off)
10
1
7
5
3
2
10
1
7
5
3
2
Esw(on)
10
0 1
10
2
3
5 7
10
2
2
3
5 7
10
3
10
0 0
10
Conditions:
V
CC
= 600V
V
GE
=
±15V
I
C
= 200A
T
j
= 125°C
Inductive load
C snubber at bus
2
3
5 7
10
1
2
3
5 7
10
2
COLLECTOR CURRENT I
C
(A)
GATE RESISTANCE R
G
(Ω)
RECOVERY LOSS vs. I
E
(TYPICAL)
10
2
7
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
10
2
7
RECOVERY LOSS (mJ/pulse)
RECOVERY LOSS (mJ/pulse)
5
3
2
5
3
2
Err
10
1
7
5
3
2
10
0 1
10
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive load
C snubber at bus
2
3
5 7
10
2
2
3
5 7
10
3
10
1
7
5
3
2
10
0 0
10
Conditions:
V
CC
= 600V
V
GE
=
±15V
I
E
= 200A
T
j
= 125°C
Inductive load
C snubber at bus
2
3
5 7
10
1
2
Err
3
5 7
10
2
EMITTER CURRENT I
E
(A)
GATE RESISTANCE R
G
(Ω)
Feb.
2009
5
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