CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Darlington Transistor
VOLTAGE 40 Volts
CURRENT 0.5 Ampere
CHTA29XPT
APPLICATION
* Preamplifier input applications.
FEATURE
* High current , Ic=500mA
* High DC current gain , hFE>20000
4.6MAX.
1.7MAX.
SC-62/SOT-89
1.6MAX.
0.4+0.05
2.5+0.1
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
MARKING
* T29
1
1 Base
2
3
CIRCUIT
(1)
B
C
(2)
2 Collector ( Heat Sink )
3 Emitter
0.8MIN.
4.6MAX.
E
(3)
Dimensions in millimeters
SC-62/SOT-89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−
65
MIN.
MAX.
40
30
10
500
1000
200
1300
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°C
2007-06
UNIT
RATING CHARACTERISTIC CURVES ( CHTA29XPT )
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
V
CB
= 30 V
V
EB
= 10 V
I
C
= 1 mA; V
CE
= 5V
I
C
= 10 mA; V
CE
=5V
I
C
= 100 mA; V
CE
= 5V
I
C
= 500 mA; V
CE
= 5V
I
C
= 100 mA; I
B
= 0.1 m A
I
C
= 100 mA; I
B
= 0.1 m A
I
C
= 10 mA; V
CE
=5V
I
C
= 30 mA; V
CE
= 5 V;
f = 100MHz
MIN.
−
−
4000
10000
20000
4000
−
−
−
220(typ)
MAX.
100
100
−
−
−
1.0
1.5
1.4
−
V
V
V
MHz
UNIT
nA
nA
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
104
UNIT
K/W
V
CE(sat)
V
BE(sat)
V
BE(ON)
f
T
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter saturation voltage
transition frequency
RF/Wirelessly
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