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5962-9559507HYX

Description
Cache SRAM Module, 128KX32, 35ns, CMOS, CQMA68, 1.560 X 1.560 INCH, CERAMIC, QFP-68
Categorystorage    storage   
File Size414KB,10 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

5962-9559507HYX Overview

Cache SRAM Module, 128KX32, 35ns, CMOS, CQMA68, 1.560 X 1.560 INCH, CERAMIC, QFP-68

5962-9559507HYX Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
Parts packaging codeQFP
package instructionDFP,
Contacts68
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time35 ns
JESD-30 codeS-CQFP-F68
length39.625 mm
memory density4194304 bit
Memory IC TypeCACHE SRAM MODULE
memory width32
Number of functions1
Number of terminals68
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX32
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDFP
Package shapeSQUARE
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height3.56 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationQUAD
width39.625 mm
Base Number Matches1
ACT-S128K32 High Speed
4 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 128K x 8 SRAMs in one MCM
Overall configuration as 128K x 32
Input and Output TTL Compatible
17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order
Full Military (-55°C to +125°C) Temperature Range
+5V Power Supply
Choice of 7 Hermetically sealed Co-fired Packages:
68–Lead, Low Profile CQFP (F1), 1.56"SQ x .140"max
68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness
available, contact factory for details)
(Drops into the 68 Lead JEDEC .99"SQ
CQFJ footprint)
68–Lead, Single-Cavity CQFP (F18), .94"SQ x .140"max
(Drops into the 68
Lead JEDEC .99"SQ CQFJ footprint)
66–Lead, PGA-Type (P2,P6 with/without shoulders), 1.185"SQ x .245"max
66–Lead, PGA-Type (P7,P3 with/without shoulders), 1.08"SQ x .160"max
Internal Decoupling Capacitors
DESC SMD# 5962–93187 Released (P2,P3,P6,P7)
CIRCUIT TECHNOLOGY
www.aeroflex.com
General Description
The ACT–S128K32 is a High
Speed 4 megabit CMOS SRAM
Multichip
Module
(MCM)
designed for full temperature
range, military, space, or high
reliability mass memory and
fast cache applications.
The MCM can be organized
as a 128K x 32 bits, 256K x 16
bits or 512k x 8 bits device and
is input and output TTL
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs are
low. Reading is accomplished
when WE is high and CE and
output enable (OE) are both
low. Access time grades of
17ns, 20ns, 25ns, 35ns, 45ns
and 55ns maximum are
standard.
The +5 Volt power supply
version is standard and the
+3.3 Volt low power model is
available (See ACT-S128K32V
data sheet).
The products are designed for
operation over the temperature
range of -55°C to +125°C and
screened under the full military
environment. DESC Standard
Military Drawing (SMD) part
numbers are released and
available.
The
ACT-S128K32
is
manufactured in Aeroflex’s
80,000ft
2
MIL-PRF-38534
certified facility in Plainview,
N.Y.
5962–95595 Released (F1,F2,F18)
Block Diagram – PGA Type Package(P2,P7) & CQFP(F2,F18)
Pin Description
WE
1
CE
1
WE
2
CE
2
WE
3
CE
3
WE
4
CE
4
I/O
0-31
A
0
– A
16
OE
128Kx8
128Kx8
128Kx8
128Kx8
A
0–16
WE
1–4
CE
1–4
OE
V
cc
8
I/O
0-7
8
I/O
8-15
8
I/O
16-23
8
I/O
24-31
GND
NC
Data I/O
Address Inputs
Write Enables
Chip Enables
Output Enable
Power Supply
Ground
Not Connected
Block Diagram – CQFP(F1)
Pin Description
CE
1
WE
OE
A
0
– A
16
128Kx8
128Kx8
128Kx8
128Kx8
CE
2
CE
3
CE
4
I/O
0-31
A
0–16
WE
CE
1–4
OE
V
cc
8
I/O
0-7
8
I/O
8-15
8
I/O
16-23
8
I/O
24-31
GND
NC
Data I/O
Address Inputs
Write Enable
Chip Enables
Output Enable
Power Supply
Ground
Not Connected
eroflex Circuit Technology - Advanced Multichip Modules © SCD1659 REV E 5/21/01
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