SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBK0140R
(RoHS Device)
Io = 100 mA
V
R
= 40 Volts
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
0.069(1.75)
0.061(1.55)
SOD-123F
0.144(3.65)
0.136(3.45)
Mechanical data
Case: SOD-123F standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & B9
Mounting position: Any
Weight: 0.011 gram(approx.).
0.057(1.45) Typ.
0.012 (0.30) Typ.
0.024(0.60) Typ.
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive Peak reverse voltage
Reverse voltage
Average forward rectified current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
45
40
100
1
-40
+125
+125
V
V
mA
A
O
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
I
FSM
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Capacitance between terminals
I
F
= 10mA
V
R
= 10V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
C
T
6
0.45
1
V
uA
pF
f = 1 MHz, and 10 VDC reverse voltage
REV:A
QW-A1120
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBK0140R)
Fig. 1 - Forward characteristics
1000
1m
100u
Fig. 2 - Reverse characteristics
Reverse current ( A )
Forward current (mA )
125 C
O
100
10u
75 C
O
10
1u
75
O
C
25
O
C
125
O
C
100n
25 C
O
-25
1
O
C
10n
-25 C
O
0.1
0
0.2
0.4
0.6
0.8
1.0
1n
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
100
Fig.4 - Current derating curve
Average forward current(%)
100
80
10
60
40
20
1
0
5
10
15
20
25
30
35
40
0
0
25
50
75
100
O
125
Reverse voltage (V)
Ambient temperature ( C)
REV:A
QW-A1120
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.90 ± 0.10
0.075
±
0.004
B
3.80 ± 0.10
0.150
±
0.004
C
1.05 ± 0.10
0.041
±
0.004
d
1.55 ± 0.10
0.061
±
0.004
D
178 ± 1
7.008
±
0.04
D
1
60.0 MIN.
2.362 MIN.
D
2
13.0 ± 0.20
0.512
±
0.008
K
SOD-123F
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069
±
0.004
F
3.50 ± 0.05
0.138
±
0.002
P
4.00 ± 0.10
0.157
±
0.004
P
0
4.00 ± 0.10
0.157
±
0.004
P
1
2.00 ± 0.05
0.079
±
0.004
T
0.22 ± 0.05
0.009
±
0.002
W
8.00 ± 0.20
0.315
±
0.008
W
1
13.5 MAX.
0.531 MAX.
K
SOD-123F
(mm)
(inch)
REV:A
QW-A1120
Page 3
Comchip Technology CO., LTD.
Embedded System
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