High-Speed Epi-CMOS (16K x 9-Bit)
Parallel FIFO
I
7206F
7206F
Logic Diagram
Memory
F
EATURES
:
• 16K x 9-bit organization
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• A total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effect
- SEL
TH
: > 100 MeV/mg/cm
2
- SEU
TH
: = 7 MeV/mg/cm
2
- SEU saturated cross section: 1.5E-5 cm
2
/bit
Asynchronous Read/Write operation
High speed CMOS epi technology
Retransmit capability
Propagation time (max access time):
- 15 ns, 20 ns, 30 ns, 40 ns, 50 ns
Status flag: empty, half-full, full
Fully expandable in both word depth and width
Bi-directional applications
Low power
Battery back-up operation
TTL compatible
Package: 28 pin R
AD
-P
AK
® flat package
D
ESCRIPTION
:
Maxwell Technologies’ 7206F high speed FIFO microcircuit
features a greater than 100 krad (Si) total dose tolerance,
depending upon space mission. It is organized such that the
data is read in the same sequential order that it was written.
Full and Empty flags are provided to prevent overflow and
underflow. The expansion logic allows unlimited expansion
capability in work size and depth with no timing penalties. Twin
address pointers automatically generate internal read and
write addresses, and automatically increment with the write
and read pin. The 7206F 9-bits wide data are used in data
communications applications where a parity bit for error
checking is necessary. The retransmit capability allows the
read pointer to be reset to its initial position without affecting
the write pointer.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
•
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1000572
12.19.01 Rev 3
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
T
ABLE
4. 7206F DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V ± 10%, T
A
= -55
TO
+125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Operating Supply Current
-15
-20
-30
-40
-50
Standby Supply Current (R = W = RS = FLVRT = V
IH
)
Power Down Current (All Input = V
CC
)
Input Leakage Current (0.4V < V
IN
< V
CC
)
Output Leakage Current (R = V
IH
, 0.4V < V
OUT
< V
CC
)
Input Low Voltage
1
Input High Voltage
1
Output Low Voltage (V
CC
min, I
OL
= 8mA)
Output High Voltage (V
CC
min, I
OH
= -2mA)
Input Capacitance
2
Output Capacitance
2
1. V
IH
max = V
CC
+ 0.3V. V
IL
min = -0.3V or -1.0V pulse width 50 ns.
2. Guaranteed by design.
S
YMBOL
I
CCOP
M
IN
--
--
--
--
--
--
--
--
--
--
2.2
--
2.4
--
--
M
AX
165
160
150
140
130
5
400
±1
±1
0.8
--
0.4
--
10
10
7206F
U
NIT
mA
I
CCSB
I
CCPD
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
C
IN
C
OUT
mA
µA
µA
µA
V
V
V
V
pF
pF
Memory
T
ABLE
5. 7206F T
IMING
C
HARACTERISTICS 1
(V
CC
= 5V ± 10%, T
A
= -55
TO
+125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Read Cycle
Read Cycle Time
-15
-20
-30
-40
-50
Access Time
-15
-20
-30
-40
-50
t
RC
ns
25
30
40
50
65
--
--
--
--
--
--
--
--
--
--
ns
15
20
30
40
50
S
YMBOL
M
IN
M
AX
U
NITS
t
A
1000572
12.19.01 Rev 3
All data sheets are subject to change without notice
3
©2001 Maxwell Technologies
All rights reserved.
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