4. Switching characteristics are independent of operating junction temperatures.
V
SD
−
−
−
−
−
−
−
0.95
1.10
0.80
30
14.5
15.5
0.013
1.2
−
−
−
−
−
−
mC
Vdc
(V
DD
= 20 Vdc, I
D
= 15 Adc,
V
GS
= 4.5 Vdc, R
G
= 2.5
W)
(V
DD
= 20 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc, R
G
= 2.5
W)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
−
−
−
−
7.0
28
22
12
12.5
115
15
17
14.4
4.0
8.5
15
55
35
20
−
−
−
−
20
−
−
nC
ns
ns
(V
DS
= 20 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1000
425
175
−
−
−
pF
V
GS(th)
1.0
−
−
−
−
−
2.1
−4.1
−
11.2
20
20
3.0
−
14.5
14.5
24
−
Vdc
mV/°C
mW
V
(BR)DSS
24
−
−
−
−
−
26.5
25.5
−
−
−
−
−
−
0.8
1.0
10
±100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
g
FS
mhos
Reverse Recovery Time
t
rr
t
a
t
b
Q
RR
ns
http://onsemi.com
2
NTD30N02
60
I
D
, DRAIN CURRENT (AMPS)
50
40
30
20
3.4 V
10
3V
0
0
1
2
3
4
5
6
7
8
0
1
3.6 V
5.4 V
60
5V
I
D
, DRAIN CURRENT (AMPS)
T
J
= 25°C
4.6 V
4.2 V
4V
50
40
30
20
10
V
DS
≥
10 V
V
GS
= 9 V
8V
7V
6V
T
J
= 25°C
T
J
= 100°C
2
3
T
J
=
−55°C
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.04
I
D
= 15 A
T
J
= 25°C
0.03
0.07
Figure 2. Transfer Characteristics
T
J
= 25°C
0.06
0.05
0.04
0.03
0.02
0.01
10
V
GS
= 10 V
V
GS
= 4.5 V
0.02
0.01
0
2
3
4
5
6
7
8
9
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
1.4
I
D
= 15 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
100
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
10
1.2
1
0.8
1
0.1
T
J
= 100°C
0.6
−50
−25
0
25
50
75
100
125
150
0.01
4
8
12
16
20
24
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
NTD30N02
2500
2000
C
iss
C
rss
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
C, CAPACITANCE (pF)
1500
1000
500
0
10
C
iss
C
oss
C
rss
5
0
5
10
15
20
25
V
GS
V
DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
4
3
2
1
0
I
D
= 30 A
V
DS
= 20 V
V
GS
= 4.5 V
T
J
= 25°C
0
8
12
Q
G
, TOTAL GATE CHARGE (nC)
4
16
20
Q
T
Q
1
Q
2
16
V
GS
12
8
4
0
1000
V
DS
= 20 V
I
D
= 30 A
V
GS
= 10 V
t, TIME (ns)
100
t
f
t
r
10
t
d(on)
t
d(off)
V
DS
1
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
15
I
S
, SOURCE CURRENT (AMPS)
12
9
6
3
0
0.3
V
GS
= 0 V
T
J
= 25°C
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
4
NTD30N02
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
B
V
R
4
SEATING
PLANE
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
S
A
1
2
3
Z
U
K
F
L
D
G
2 PL
J
H
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
3.0
0.118
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone:
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