CAT28LV64N-35T datasheet, PDF - EEWORLD Datasheet

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CAT28LV64N-35T: DescriptionEEPROM; Categorystorage storage; File Size55KB，10 Pages; ManufacturerCatalyst; Websitehttp://www.catalyst-semiconductor.com/

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CAT28LV64N-35T Overview

EEPROM

CAT28LV64N-35T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	QFJ
package instruction	QCCJ,
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	350 ns
Other features	100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION
Data retention time - minimum	100
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	65536 bi
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	11.43 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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Preliminary

CAT28LV64

64K-Bit CMOS PARALLEL E

PROM

FEATURES

3.0V to 3.6 V Supply

Read Access Times:

CMOS and TTL Compatible I/O

Automatic Page Write Operation:

– 250/300/350ns

Low Power CMOS Dissipation:

– 1 to 32 Bytes in 5ms

– Page Load Timer

End of Write Detection:

– Active: 8 mA Max.

– Standby: 100

A Max.

Simple Write Operation:

– Toggle Bit

–

DATA

Polling

Hardware and Software Write Protection

100,000 Program/Erase Cycles

100 Year Data Retention

– On-Chip Address and Data Latches

– Self-Timed Write Cycle with Auto-Clear

Fast Write Cycle Time:

– 5ms Max.

Commercial, Industrial and Automotive

Temperature Ranges

DESCRIPTION

The CAT28LV64 is a low voltage, low power, CMOS

parallel E

PROM organized as 8K x 8-bits. It requires a

simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with auto-

clear and V

power up/down write protection eliminate

additional timing and protection hardware.

DATA

Polling

and Toggle status bit signal the start and end of the self-

timed write cycle. Additionally, the CAT28LV64 features

hardware and software write protection.

The CAT28LV64 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed to

endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC

approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-

pin PLCC packages.

BLOCK DIAGRAM

A5–A12

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

8,192 x 8

PROM

ARRAY

32 BYTE PAGE

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

LOGIC

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

5094 FHD F02

I/O0–I/O7

A0–A4

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. 25035-00 2/98

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