CAT28C513NI-12T datasheet, PDF

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CAT28C513NI-12T: Description128Kx8 EEPROM; Categorystorage storage; File Size79KB，11 Pages; ManufacturerCatalyst; Websitehttp://www.catalyst-semiconductor.com/

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CAT28C513NI-12T Overview

128Kx8 EEPROM

CAT28C513NI-12T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Catalyst
Parts packaging code	QFJ
package instruction	QCCJ, LDCC32,.5X.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	120 ns
Other features	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS
command user interface	NO
Data polling	YES
Data retention time - minimum	100
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	524288 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
page size	128 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum standby current	0.0002 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
switch bit	YES
width	11.43 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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CAT28C512/513

512K-Bit CMOS PARALLEL EEPROM

FEATURES

Fast Read Access Times: 120/150 ns

Low Power CMOS Dissipation:

Automatic Page Write Operation:

–Active: 50 mA Max.

–Standby: 200

A Max.

Simple Write Operation:

–1 to 128 Bytes in 5ms

–Page Load Timer

End of Write Detection:

–On-Chip Address and Data Latches

–Self-Timed Write Cycle with Auto-Clear

Fast Write Cycle Time:

–Toggle Bit

–DATA Polling

DATA

Hardware and Software Write Protection

100,000 Program/Erase Cycles

100 Year Data Retention

Commercial, Industrial and Automotive

–5ms Max

CMOS and TTL Compatible I/O

Temperature Ranges

DESCRIPTION

The CAT28C512/513 is a fast,low power, 5V-only CMOS

parallel EEPROM organized as 64K x 8-bits. It requires

a simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C512/513 features hardware and software write

protection.

The CAT28C512/513 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC

approved 32-pin DIP, PLCC, 32-pin TSOP and 40-pin

TSOP packages.

BLOCK DIAGRAM

A7–A15

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

65,536 x 8

PROM

ARRAY

128 BYTE PAGE

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

5096 FHD F02

I/O0–I/O7

A0–A6

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. 1007, Rev. A

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