Philips Semiconductors
Product specification
Bilateral switch
FEATURES
•
Very low ON-resistance:
– 26
Ω
(typical) at V
CC
= 3.0 V
– 16
Ω
(typical) at V
CC
= 4.5 V
– 14
Ω
(typical) at V
CC
= 5.5 V.
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
SOT353 and SOT753 package
•
Output capability: non standard
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3 ns.
74AHC1G66; 74AHCT1G66
DESCRIPTION
The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G66 provides an analog switch.
The switch has two input/output pins (Y and Z) and an
active HIGH enable input pin (E). When pin E is LOW, the
analog switch is turned off.
TYPICAL
SYMBOL
t
PZH
/t
PZL
t
PHZ
/t
PLZ
C
I
C
PD
C
S
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ ((C
L
+ C
S
)
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
C
S
= maximum switch capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PARAMETER
turn-on time E to V
os
turn-off time E to V
os
input capacitance
power dissipation capacitance
switch capacitance
C
L
= 50 pF; f = 10 MHz;
notes 1 and 2
CONDITIONS
AHC1G
C
L
= 15 pF; R
L
= 1 kΩ;
V
CC
= 5 V
C
L
= 15 pF; R
L
= 1 kΩ;
V
CC
= 5 V
3
5
2
13
4
3
5
2
15
4
AHCT1G
ns
ns
pF
pF
pF
UNIT
2002 Jun 06
2
Philips Semiconductors
Product specification
Bilateral switch
RECOMMENDED OPERATING CONDITIONS
74AHC1G66; 74AHCT1G66
74AHC1G66
SYMBOL
V
CC
V
I
V
S
T
amb
PARAMETER
supply voltage
input voltage
switch voltage
operating ambient
temperature
input rise and fall times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
V
CC
= 3.3
±0.3
V
V
CC
= 5.0
±0.5
V
−
−
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+125
74AHCT1G66
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+125
V
V
V
°C
t
r
, t
f
−
−
100
20
−
−
−
−
−
20
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
note 1.
SYMBOL
V
CC
I
IK
I
SK
I
S
I
CC
, I
GND
T
stg
P
D
Note
1. To avoid drawing V
CC
current out of pin Z, when switch current flows into pin Y, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no V
CC
current will flow out of pin Y.
In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed
V
CC
or GND.
PARAMETER
supply voltage
input diode current
switch diode current
switch source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
S
<
−0.5
V or V
S
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
−20
±20
±25
±75
+150
250
UNIT
V
mA
mA
mA
mA
°C
mW
2002 Jun 06
5
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