LED DOT MATRIX
BL-M23A881XXX
n
Ø
Ø
Ø
Ø
Ø
Ø
Features:
60.20mm (2.3” F 5.0 dot matrix LED display, RGB COLOR
)
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
n
Electrical-optical characteristics: (Ta=25
℃
)
Part No
Row Cathode
Row Anode
Emitted
Column Anode
Column Cathode
Color
Super Red
BL-M23D881RGB-
XX
Green
Ultra Blue
Ultra Red
(Test Condition: IF=20mA)
Chip
VF
Unit:V
λ
P
Material
Typ
Max
(nm)
GaAlAs/GaAs,DH
GaP/GaP
InGaN
GaAlAs/GaAs,DDH
AlGaInP
InGaN
660
570
470
660
574
470
1.85
2.20
2.70
1.85
2.20
2.70
2.20
2.50
4.20
2.20
2.50
4.20
Iv
TYP.(mcd
)
280
250
150
BL-M23C881RGB-
XX
310
380
270
BL-M23C881DUG
UB-XX
BL-M23D881DUG
UB-XX
Ultra
Green
Ultra Blue
·
-XX: Surface / Lens color：
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
n
1
Black
White
diffused
2
Gray
Red
Diffused
3
Red
Green
Diffused
4
Green
Yellow
Diffused
5
Absolute maximum ratings (Ta=25
℃
)
S
25
60
5
150
G
30
65
5
150
B
30
120
5
100
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Lead Soldering
Temperature
T
SOL
D
25
60
5
150
-40 to +80
-40 to +85
UG
30
75
5
150
UB
30
120
5
100
Unit
mA
mW
V
mA
℃
℃
℃
Max.260±5
℃
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 1 of 3
WWW.BETLUX.COM
EMAIL:
SALES@BETLUX.COM
,
BETLUX@BETLUX.COM
LED DOT MATRIX
BL-M23A881XXX
■
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 2 of 3
WWW.BETLUX.COM
EMAIL:
SALES@BETLUX.COM
,
BETLUX@BETLUX.COM
LED DOT MATRIX
BL-M23A881XXX
■
Typical electrical-optical characteristics curves:
1.0
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(
λ
p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
REL ATIVE LUMIN OU S IN TENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
1
3.0
FORWARD CURRENT(mA)
50
40
30
20
10
0
RELATIVE LUMINOUS INTENSITY
40
30
20
10
0
1.2
1
6
2,4,8,A
3
5
2.0
5
B
1.0
0
20
40
60
80
100
1.6
2.0
2.4
2.6
3.0
20
40
60
80
100
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta(
℃
)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
3KHz
300KHz
1KHz
100KHz F-REFRESH RATE
10 10KHz
9
8
7
6
5
Ipeak M AX.
IDC MAX.
4
3
2
0
10
20
30
40
50
60
70
1
AMBIENT TEMPERATURE Ta(
℃
)
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
Ipeak MAX.
IDC MAX.
30KHz
3KHz
300Hz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
10,000
NOTE:25
℃
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 3 of 3
WWW.BETLUX.COM
EMAIL:
SALES@BETLUX.COM
,
BETLUX@BETLUX.COM
Microcontroller MCU
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