LED DOT MATRIX
BL-M23A881XXX
Features:
60.20mm (2.3”)
Φ5.0
dot matrix LED display, RGB COLOR
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25 )
Part No
Emitted
Row Cathode
Row Anode
Column Anode
Column Cathode
Color
Super Red
BL-M23A881RGB-
XX
BL-M23B881RGB-
XX
Green
Ultra Blue
Ultra Red
BL-M23A881DUGU
B-XX
BL-M23B881DUGU
B-XX
Ultra
Green
Ultra Blue
·-XX: Surface / Lens color
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
Absolute maximum ratings (Ta=25 )
Parameter
Storage Temperature T
STG
Lead Soldering
Temperature
T
SOL
-40 to +85
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
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¢
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
w
e
.b
w
w
1
2
Black
White
diffused
S
25
60
5
150
G
30
65
5
150
¢
¢
(Test Condition: IF=20mA)
VF
Chip
Unit:V
λ
P
Material
Typ
Max
(nm)
GaAlAs/GaAs,DH
GaP/GaP
InGaN
GaAlAs/GaAs,DDH
AlGaInP
660
570
470
1.85
2.20
2.20
2.50
Iv
TYP.(mcd
)
280
250
150
Gray
Red
Diffused
u
tl
InGaN
.
x
660
574
470
m
o
c
2.70
4.20
1.85
2.20
2.20
2.50
2.70
4.20
310
380
270
¡
3
4
Green
Yellow
Diffused
5
Red
Green
Diffused
B
D
25
60
5
150
-40 to +80
UG
30
75
5
150
UB
30
120
5
100
Unit
mA
mW
V
mA
30
120
5
100
LED DOT MATRIX
BL-M23A881XXX
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
w
e
.b
w
w
u
tl
.
x
m
o
c
LED DOT MATRIX
BL-M23A881XXX
1.0
0.5
0
350
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
40
30
20
10
0
1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
w
0
10
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
1
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
free air temperature unless otherwise specified
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e
.b
w
w
2.0
1.0
0
3.0
20
40
60
u
tl
1
5
B
100
80
¦
¤
¦
£
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
.
x
50
40
30
20
10
0
FORWARD CURRENT(mA)
m
o
c
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY
1
6
2,4,8,A
3
5
10,000
Mobile and portable
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