INFRARED EMITTING DIODES
BL-L314XX-IR
Features:
3.0mm Round Type Infrared LED
High Reliability
Peak Wavelength at 940, 880, 850nm
Water Clear, yellow Transparent, Blue Transparent available
IC compatible /Low current capability.
Application
Free air transmission system
Infrared remote control units with high power requirement
Smoke detector
Infrared Camera
Infrared applied system
Electrical-optical characteristics: (Ta=25°
C)
Chip
Part Number
Material
λ
P
(nm)
(Test Condition: IF=50mA)
Lens Type
∆λ
BL-L314IRAC
BL-L314IRAB
BL-L314IRBC
BL-L314IRBB
BL-L314IRCC
BL-L314IRCB
BL-L314IRCY
GaAs
GaAs
GaAlAs
GaAlAs
GaAlAs
GaAlAs
GaAlAs
Absolute maximum ratings (Ta=25°
C)
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Lead Soldering Temperature
TSOL
Rating
50
150
5
250
-40 to +80
-40 to +85
Max.260 5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
Unit
mA
mW
V
mA
w
e
.b
w
w
940
940
Water Clear
Blue Trans.
880
880
850
Water Clear
Blue Trans.
Water Clear
Blue Trans.
850
850
Yellow Trans.
50
50
50
u
tl
10
10
10
10
10
10
10
Ir
(Vr=5V,
uA
)
.
x
Typ
1.40
1.40
1.70
1.70
1.70
1.70
1.70
Forward
Voltage(VF)
Unit:V
m
o
c
Radiant
Power
(mw/sr)
Typ
25
25
25
25
45
45
45
Viewing
Angle
2θ1/2(deg)
Max
1.60
1.60
2.00
2.00
2.00
2.00
2.00
50
40
50
50
50
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REV NO: V.2
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INFRARED EMITTING DIODES
BL-L314XX-IR
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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Package configuration & Internal circuit diagram
w
e
.b
w
w
u
tl
.
x
m
o
c
CATHODE
ANODE
INFRARED EMITTING DIODES
BL-L314XX-IR
1.0
0.5
0
350
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
40
30
20
10
0
1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
w
0
10
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
1
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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¦
e
.b
w
w
2.0
1.0
0
3.0
20
40
60
u
tl
1
5
B
100
80
§
¥
§
£
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
.
x
50
40
30
20
10
0
FORWARD CURRENT(mA)
m
o
c
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY
1
6
2,4,8,A
3
5
10,000
Analogue and Mixed Signal
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