1. The SRAM is immune to latchup to particles >100MeV-cm
2
/mg.
2. 90% worst case particle environment, Geosynchronous orbit, 100 mils of
Aluminum.
SUPPLY SEQUENCING
No supply voltage sequencing is required between V
DD1
and
V
DD2
.
POWER-UP REQUIREMENTS
During power-up of the UT8ER512K32 device, the power
supply voltages will transverse through voltage ranges where
the device is not guaranteed to operate before reaching final
levels. Since some circuits on the device will start to operate at
lower voltage levels than others, the device may power-up in an
unknown state. To eliminate this with most power-up situations,
the device employs an on-chip power-on-reset (POR) circuit.
The POR, however, requires time to complete the operation.
Therefore, it is recommended that all device activity be delayed
by a minimum of 100ms, after both V
DD1
and V
DD2
supplies
have reached their respective minimum operating voltage.
4
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD1
V
DD2
V
I/O
T
STG
P
D2
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage (Core)
DC supply voltage (I/O)
Voltage on any pin
Storage temperature
Maximum package power dissipation
permitted @ Tc = +125
o
C
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 2.1V
-0.3 to 3.8V
-0.3 to 3.8V
-65 to +150°C
5W
+150°C
5°C/W
±
10 mA
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Per MIL-STD-883, Method 1012, Section 3.4.1, P
D
= (T
JC
(max) - Tc (max))
Θ
JC
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD1
V
DD2
T
C
V
IN
PARAMETER
DC supply voltage (Core)
DC supply voltage (I/O)
Case temperature range
DC input voltage
LIMITS
1.7 to 1.9V
1
3.0 to 3.6V
(C) Screening: -55 to +125°C
(W) Screening: -40 to +125°C
0V to V
DD2
Notes:
1. For increased noise immunity, supply voltage V
DD1
can be increased to 2.0V. All characteristics contained herein are guaranteed by characterization at V
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