SUPER FLUX LED LAMP, 4PIN LED
BL-FL760Rxx
Part Number
Emitted Color
Material
λ
P
(n
m)
BL-FL760RURC
BL-FL760RUEC
BL-FL760RUYC
BL-FL760RUGC
BL-FL760RPGC
BL-FL760RBGC
BL-FL760RUBC
BL-FL760RUWC
Parameter
T
SOL
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£¢
Lead Soldering Temperature
Max.260 5
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
£
¡
¡
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Features:
7.62*7.62*3.5MM, flat round top, SUPER FLUX LED LAMP
Ultra brightness.
Wide Viewing Angles.
Ideal For Backlight and Indicator
RoHs Compliance
Electrical-optical characteristics: (Ta=25°
C)
Chip
(Test Condition: IF=70mA)
Luminous
Intensity
(Iv)
Unit:mcd
Lens
Type
Forward
Voltage(VF)
Unit:V
Viewi
ng
Angle
2θ1/2
(deg)
Typ
Ultra Red
Ultra Orange
Ultra Yellow
Ultra Green
Ultra Pure Green
AlGaAs,DDH
AlGaInP
AlGaInP
AlGaInP
InGaN
660
630
1.95
2.10
2.10
2.20
3.80
3.80
2.70
2.70
Max
Absolute maximum ratings (Ta=25°
C)
UR
w
e
.b
w
w
Ultra Bluish Green
Ultra Blue
InGaN
InGaN
Ultra White
InGaN
UE
u
tl
574
525
Water
Clear
505
470
/
UY
UG
590
.
x
PG
2.20
2.50
2.50
2.50
4.50
4.50
4.20
4.20
m
o
c
Min.
600
Typ.
1000
800
1500
600
1300
700
200
1000
800
800
1000
5000
4000
2000
5000
BG
UB
W
160
Unit
25
60
5
150
30
65
5
150
30
65
5
150
30
75
5
150
30
110
5
150
30
110
5
100
30
120
5
100
30
120
5
100
mA
mW
V
mA
-40 to +80
-40 to +85
SUPER FLUX LED LAMP, 4PIN LED
BL-FL760Rxx
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
CHAMFER
1.25x1.25
(.049x.049)
C
R0.69 0.20
(.027 .008)
C
7.62
(.300
A
7.62
(.300
A
0.50
.020)
R9.4
0.50
.020)
3.50
(.138
0.50
.020)
0.40 0.20TYP
(.016 .008)
w
e
.b
w
w
5.08
(.200
0.30
.012)
0.50(.020)TYP.
u
tl
.
x
m
o
c
5.20
(.205
0.20
.008)
8.50
(.335
0.20
.008)
1.55 0.20TYP.
(.061 .008)
0.76 0.10TYP.
(.030 .004)
5.08
(.200
0.30
.012)
SUPER FLUX LED LAMP, 4PIN LED
BL-FL760Rxx
1.0
0.5
0
350
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
40
30
20
10
0
1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
w
0
10
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
1
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
free air temperature unless otherwise specified
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§
e
.b
w
w
2.0
1.0
0
3.0
20
40
60
u
tl
1
5
B
100
80
¨
¦
¨
¤
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
.
x
50
40
30
20
10
0
FORWARD CURRENT(mA)
m
o
c
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY
1
6
2,4,8,A
3
5
10,000
Embedded System
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