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BDV65C

Description
12 A, 120 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size203KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDV65C Overview

12 A, 120 V, NPN, Si, POWER TRANSISTOR

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
12A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 2.0V(Max.)@ I
C
= 5A
·Complement
to Type BDV64/A/B/C
APPLICATIONS
·Designed
for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDV65
Collector-Base
Voltage
BDV65A
BDV65B
VALUE
60
80
UNIT
BDV65/A/B/C
V
CBO
V
CEO
Collector-Emitter
Voltage
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
V
100
BDV65C
BDV65
120
60
BDV65A
BDV65B
80
V
100
BDV65C
120
5
V
12
15
0.5
125
W
3.5
150
-65~150
A
A
A
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Collector Power Dissipation
@ T
a
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.0
35.7
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn

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